?? t4-lds-0218-1, rev. 2 (11/07/14) (111513) ?2014 microsemi corporation page 1 of 5 1n6638us, 1n6642us, 1n6643us ? available on commercial versions voidless hermetically sealed switching diodes qualified per mil-prf-19500/578 qualified levels: jan, jantx, jantxv and jans description this popular surface mount equivalent jedec registered switching/signal diodes are military qualified and available with internal metallurgical bonded construction. these small low capacitance diodes with very fast switching s peeds are hermetically sealed and bonded into a d-5d package. they may be used in a vari ety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applicat ions, etc. microsemi also offers a variety of other switching/signal diodes. d sq-melf (d-5d) package also available in: d package (axial-leaded) 1n6638_42_43 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered surface mount equiv alents of 1n6638, 1n6642, and 1n6643. ? ultra fast re covery time. ? very low capacitance. ? metallurgically bonded. ? non-cavity glass package. ? jan, jantx, jantxv and jans qualificatio ns are available per mil-prf-19500/578. ? replacements for 1n4148ur, 1n41 48ur-1, 1n4150ur-1, and 1n914ur. ? rohs compliant devices available (commercial grade only). applications / benefits ? small size for high density mounting (see package illustration). ? ideal for: high frequency data lines rs-232 & rsC422 interface networks ethernet: 10 base t switching core drivers lan computers maximum ratings @ t a = +25 o c unless otherwise noted. msc C lawrence 6 lake street, lawrence, ma 01841 1-800-446-1158 tel: (978) 620-2600 fax: (978) 689-0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp t j and t stg -65 to +175 o c thermal resistance junction-to-end cap r ? jec 40 o c/w thermal resistance junction-to-ambient (1) r ? ja 250 o c/w peak forward surge current @ t a = +25 o c (test pulse = 8.3 ms, half-sine wave.) i fsm 2.5 a average rectified forward current @ t a = +75 o c (derate at 4.6 ma/c above t ec = + 110 c) i o 300 ma breakdown voltage: 1n6638us 1n6642us 1n6643us v br 150 100 75 v working peak reverse voltage: 1n6638us 1n6642us 1n6643us v rwm 125 75 50 v notes: 1. t a = +75 c on printed circuit board (pcb), pcb = fr4 - .0625 inch (1.59 mm) 1-layer 1-oz cu, horizontal, in still air; pads for us = .061 inch (1.55 mm) x .105 inch (2.67 mm); r ja with a defined pcb thermal resistance condition in cluded, is measured at i o = 300 ma. downloaded from: http:///
?? t4-lds-0218-1, rev. 2 (11/07/14) (111513) ?2014 microsemi corporation page 2 of 5 1n6638us, 1n6642us, 1n6643us mechanical and packaging ? case: voidless hermetica lly sealed hard glass. ? terminals: tin-lead plate with >3% lead. solder dip is available upon request. ? marking: body painted and alpha numeric. ? polarity: cathode indicated by band. ? tape & reel option: standard per eia-481-1-a wi th 12 mm tape. consult factory for quantities. ? see package dimensions on last page. part nomenclature jan 1n6638 us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number see electrical characteristics table rohs compliance e3 = rohs compliant (available on commercial grade only) blank = non-rohs compliant surface mount package symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak volt age that can be applied over the operating temperature range. v f maximum forward voltage: the maximum forward vo ltage the device will exhibi t at a specified current. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the specified voltage and temperature. c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage. t rr reverse recovery time: the time interval between the in stant the current passes through zero when changing from the forward direction to the reverse direction and a specif ied recovery decay point after a peak reverse current is reached. electrical characteristics @ 25 o c unless otherwise noted. type number maximum forward voltage v f @ i f maximum dc reverse current i r1 i r2 i r3 i r4 reverse recovery time t rr (note 1) maximum forward recovery voltage and time i f =200ma, t r =1ns maximum junction capacitance f = 1 mhz vsig = 50 mv (p-p) v r = 20 v v r =v rwm v r =20 v t a = +150 o c v r =v rwm t a = +150 o c v frm t fr v r =0 v v r =1.5 v v @ ma v @ ma na na ? a ? a ns v ns pf pf 1n6638us 0.8 v @ 10 ma 1.1 v @ 200 ma 35 500 50 100 4.5 5.0 20 2.5 2.0 1n6642us 0.8 v @ 10 ma 1.2 v @ 100 ma 25 500 50 100 5.0 5.0 20 5.0 2.8 1n6643us 0.8 v @ 10 ma 1.2 v @ 100 ma 50 500 75 100 6.0 5.0 20 5.0 2.8 note: 1. reverse recovery time test conditions C i f =i r =10 ma, i r(rec) = 1.0 ma, c=3 pf, r l = 100 ohms. downloaded from: http:///
?? t4-lds-0218-1, rev. 2 (11/07/14) (111513) ?2014 microsemi corporation page 3 of 5 1n6638us, 1n6642us, 1n6643us graphs t a ( o c ) ambient temperature figure 1 temperature C current derating time (s) figure 2 maximum thermal impedance at t a = 55 o c sinewave operation maximum i o rating (ma) thermal im p edance ( o c/w ) downloaded from: http:///
? ? t4-l d d s-0218-1, re thermal im p edance ( o c/w ) v. 2 (11/07/14 ) ) (111513) maxi m ?2014 mic grap h f m um therm a rosemi corpor 1 n h s (continu e time (s) f igure 3 a l impedance r ation n 6638u s e d) at t ec = 25 o c s , 1n66 4 c 4 2us, 1 n page 4 of 5 n 6643u s s downloaded from: http:///
?? t4-lds-0218-1, rev. 2 (11/07/14) (111513) ?2014 microsemi corporation page 5 of 5 1n6638us, 1n6642us, 1n6643us package dimensions d-5d notes: 1. dimensions are in inches. millimeters ar e given for general information only. 2. dimensions are pre-solder dip. 3. u-suffix parts are structurally id entical to the us-suffix parts. 4. in accordance with asme y14.5m, diameters are equivalent to x symbology. dim inch millimeters min max min max bd 0.070 0.085 1.78 2.16 ect 0.019 0.028 0.48 0.71 bl 0.165 0.195 4.19 4.95 s 0.003 min. 0.08 min. downloaded from: http:///
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