a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fa x (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv ceo i c = 50 ma 35 v bv cer i c = 50 ma r be = 10 w 60 v bv ebo i e = 10 ma 4.0 v i ces v be = 50 v 5 ma h fe v ce = 5.0 v i c = 1.0 a 10 100 --- p g h h c v cc = 50 v p out = 150 w f = 960 - 1215 mhz 7.5 40 db % npn silicon rf power transistor AJT150 description: the asi AJT150 is designed for features: input matching network omnigold ? metalization system maximum ratings i c 10 a v cb 60 v v ce 35 v p diss 140 w t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 0.57 o c/w package style .400 2l flg (a) order code: asi10548 minimum inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 b c d e f g a maximum .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 h dim k l i j .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 n m .118 / 3.00 .131 / 3.33 .135 / 3.43 .145 / 3.68 .072 / 1.83 .052 / 1.32 p .230 / 5.84 g c n 2xr 4x .062 x 45 i e p m f l h j k 2xb d .040 x 45 a .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11
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