n-channel fredfet absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 20 13 120 30 1875 16 min typ max 460 0.27 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal waveform from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications zvs phase shifted and other full bridge half bridge pfc and other boost converter buck converter single and two switch forward flyback features fast switching with low emi low t rr for high reliability ultra low c rss for improved noise immunity low gate charge avalanche energy rated rohs compliant s o t -2 2 7 is oto p ? file # e145592 "ul recognized" g s s d APT19F100J 1000v, 20a, 0.44 max, t rr 290ns APT19F100J power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. microsemi website - http://www.microsemi.com 050-8080 rev e 8-2011 downloaded from: http:///
static characteristics t j = 25c unless otherwise speci ? ed dynamic characteristics t j = 25c unless otherwise speci ? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 14.65mh, r g = 2.2 , i as = 16a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -2.47e-7/v ds ^2 + 4.36e-8/v ds + 8.44e-11. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 1000 1.15 0.39 0.44 2.5 4 5 -10 250 1000 100 min typ max 20 120 1.1 290 600 1.3 3.5 10.6 14.2 25 min typ max 34 8500 115 715 290 150 260 46 125 36 37 140 35 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d = 16a v gs = v ds , i d = 2.5ma v ds = 1000v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 16a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 16a 3 t j = 25c v dd = 100v t j = 125c di sd / dt = 100a/ s t j = 25c t j = 125c i sd 16a, di/dt 1000a/ s, v dd = 667v, t j = 125c test conditions v ds = 50v , i d = 16a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 667v v gs = 0 to 10v , i d = 16a, v ds = 500v resistive switching v dd = 667v , i d = 16a r g = 2.2 6 , v gg = 15v parameter drain-source breakdown voltage breakdown voltage temperature coef ? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef ? cient zero gate voltage drain current gate-source leakage current parametercontinuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol i s i sm v sd t rr q rr i rrm dv/dt symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f 050-8080 rev e 8-2011 APT19F100J downloaded from: http:///
v gs = 6, 7, 8 & 9v 4.5v t j = 125c t j = 25c t j = -55c v gs = 10v 5v v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 16a t j = 125c t j = 25c t j = -55c c oss c iss i d = 16a v ds = 800v v ds = 200v v ds = 500v t j = 150c t j = 25c t j = 125c t j = 150c c rss t j = 125c t j = 25c t j = -55c v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage 0 5 10 15 20 25 30 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 4 8 12 16 20 0 200 400 600 800 1000 0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5 8070 60 50 40 30 20 10 0 3.02.5 2.0 1.5 1.0 0.5 0 4540 35 30 25 20 15 10 50 1614 12 10 86 4 2 0 3025 20 15 10 50 120100 8060 40 20 0 20,00010,000 1000 100 10 120100 8060 40 20 0 APT19F100J 050-8080 rev e 8-2011 downloaded from: http:///
31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drai n gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handlin g capability is equal for either source terminal . sot-227 (isotop ? ) package outline 1ms 100ms r ds(on) 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration dc line 100 s i dm 10ms 13 s 100 s i dm 100ms 10ms 13 s r ds(on) dc line t j = 150c t c = 25c 1ms t j = 125c t c = 75c i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) 1 10 100 1000 1 10 100 1000 200100 10 1 0.1 0.300.25 0.20 0.15 0.10 0.05 0 200100 10 1 0.1 APT19F100J 050-8080 rev e 8-2011 downloaded from: http:///
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