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  ct micro rev 0 (preliminary) proprietary & confidential page 1 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter package outline schematic features ? sm all double - end package ? viewing angle at x axis (note3) = ? 65 0 ? high reliability ? good spectral matching to si photo detector ? rohs compliance applications ? i nfrared sensor ? l ight barrier ? infrared touch panel solutions description the h irp30 10 q 20 - b3 0 is a ga al as infrared led housed in a miniature smd package . the d evice has a peak wavelength of 85 0nm led spectral ly matched with phototransistor or photodiode . a node c athode
ct micro rev 0 (preliminary) proprietary & confidential page 2 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter absolute maximum rating at 25 0 c symbol parameters ratings units notes i f continuous forward current 70 ma i fp peak forward current 0 .7 a 1 v r reverse voltage 5 v t opr operating te mperature - 40 ~ +85 0 c t stg storage temperature - 40 ~ +100 0 c t sol soldering temperature 260 0 c 2 p d power dissipation at(or below) 25 free air temperature 1 40 mw elec tro - optical characteristics ta = 25c (unless otherwise specified) optical characteristics symbol parameters test conditions min typ max units notes ie radiant intensity i f =20ma 1.0 2.1 - mw/sr i f = 70 ma - 6 .0 - p peak wavelength i f =20 ma 830 850 870 nm ? spectral bandwidth i f =20 ma - 3 0 - nm 1/2 angle of half intensity (x) i f =20ma - ? 65 - deg 3 angle of half intensity (y) - ? 6 5 - electrical characteristics symbol parameters test condi tions min typ max units notes v f forward voltage i f =20 ma 1.30 1. 40 1. 7 v i f =70ma 1.40 1. 56 2.0 i r reverse current v r =5v - - 10 a notes: 1 : i fp conditions -- pulse width Q 100s and duty Q 1%. 2 : soldering time Q 5 seconds. 3 : test condition :
ct micro rev 0 (preliminary) proprietary & confidential page 3 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter typical characteristic curves
ct micro rev 0 (preliminary) proprietary & confidential page 4 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter typical characteristic curves
ct micro rev 0 (preliminary) proprietary & confidential page 5 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter package dimension all dimensions are in mm, unless otherwise stated recommended soldering mask all dimensions are in mm, unless otherwise stated ordering information p art number description quantity h irp3010q 20 - b3 0 tape & reel 3 000 pcs
ct micro rev 0 (preliminary) proprietary & confidential page 6 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter reel dimension all dimensions are in mm, unless otherwise stated tape dimension all dimensions are in mm, unless otherwise stated
ct micro rev 0 (preliminary) proprietary & confidential page 7 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter reflow profile profile feature pb - free assembly profile temperature min. (tsmin) 150c temperature max. (tsmax) 200c time (ts) from (tsmin to tsmax) 60 - 120 seconds ramp - up rate (t l to t p ) 3c/second max. liquidous temperature (t l ) 217c time (t l ) maintained above (t l ) 60 C 150 seconds peak body package temperature 260c +0c / - 5c time (t p ) within 5c of 260c 30 seconds ramp - down rate (t p to t l ) 6c/second max time 25c to peak temperature 8 minutes max.
ct micro rev 0 (preliminary) proprietary & confidential page 8 m a y , 201 4 h irp3010q 20 - b3 0 smd type 85 0nm infrared emitter disclaimer ct micro reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ct micro does not assume any liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its patent rights, nor the rights of others. ______________________________________________________________________________________ ct micro are not authorized for use as critical components in life support devices or s ystems without express written approval of ct micro international corp oration . 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perf orm when properly used in accordance with instruction for use provided in the label l ing, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perfo rm can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.


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