050-4935 rev b 2-2008 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v isolation v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 300 a) on state drain voltage 1 (i d (on) = 10a, v gs = 10v) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 15v, i d = 10a) rms voltage (60hz sinewave from terminals to mounting surface for 1 minute) gate threshold voltage (v ds = v gs , i d = 6ma) min typ max 1000 5 7 300 3000 600 3 14 tbd 2 4 unit volts a na mhos volts symbol v dss i d v gs p d t j ,t stg t l parameter drain-source voltage continuous drain current @ t c = 25c gate-source voltage total device dissipation @ t c = 25c operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. ARF1519 1000 20 30 1350 -55 to 175 300 unit volts amps volts watts c rf power mosfet n- channel enhancement mode 250v 750w 25mhz the ARF1519 is an rf power transistor designed for very high power scienti ? c, commercial, medical and industrial rf power generator and ampli ? er applications up to 25 mhz. speci? ed 250 volt, 13.56 mhz characteristics: output power = 750 watts. gain = 17db (class c) ef? ciency > 75% high performance power rf package. very high breakdown for improved ruggedness. low thermal resistance. nitride passivated die for improved reliability. ARF1519 thermal characteristics symbol r jc r cs characteristic (per package unless otherwise noted)junction to case case to sink (use high ef ? ciency thermal joint compound and planar heat sink surface.) min typ max 0.13 0.09 unit c/w volts ARF1519 beo 104t-100 microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . downloaded from: http:///
050-4935 rev b 2-2008 dynamic characteristics ARF1519 symbol c iss c oss c rss characteristicinput capacitance output capacitance reverse transfer capacitance test conditions v gs = 0v v ds = 150v f = 1 mhz min typ max 4600 5600 310 350 90 120 unit pf functional characteristics symbol g ps test conditions f = 13.56mhz v gs = 0v v dd = 200v p out = 750w no degradation in output power characteristic common source ampli ? er power gain drain ef ? ciency electrical ruggedness vswr 10:1 min typ max 17 20 70 75 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2%. per transistor section unless otherwise speci ? ed. capacitance (pf) v ds , drain-to-source voltage (volts) figure 1, typical capacitance vs. drain-to-source voltage .1 1 10 100 200 c iss c oss c rss 6050 40 30 20 10 0 0 1 2 3 4 5 6 7 v gs , gate-to-source voltage (volts) figure 2, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = +125c t j = +25c microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
050-4935 rev b 2-2008 ARF1519 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 5, maximum effective transient thermal impedance, junction-to-case vs. pulse duration z q jc , thermal impedance (c/w) 0.20.1 0.050.01 0.0050.001 0.1 0.02 0.05 0.2 d=0.5 0.01 single pulse t c , case temperature (c) figure 3, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 4, typical output characteristics 1.21.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) 5.5v 4.5v 4v 5v 6v 5045 40 35 30 25 20 15 10 50 6.5v table 1 - typical class ab large signal impedance -- ARF1519 f (mhz) z in ( )z ol ( ) z in - gate shunted with 25 i dq = 100ma z ol - conjugate of optimum load for 750 watts output at v dd = 200v 2.0 13.5 10.6 -j 12.2 0.5 -j 2.7 31 -j 4.7 15.6 -j 16 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
050-4935 rev b 2-2008 ARF1519 beo 1525-100 1.000 .500 .150r .500 .466 .750 1.500 1.250 .300 .200 .250 .250 .005 .040 .125d 1 2 4 3 1 drain2 source 3 source 4 gate thermal considerations and package mounting: the rated 1350w power dissipation is only available when the package mounting surface is at 25 c and the junction temperature is 200 c. the thermal resistance between junctions and case mounting surface is 0.12 c/w. when instal- led, an additional thermal impedance of 0.1 c/w between the package base and the mounting sur-face is typical. insure that the mounting surface is smooth and flat. thermal joint compound must be used to reduce the effects of small sur- face irregularities. the heatsink should incorpo- rate a copper heat spreader to obtain best re- sults. use 4-40 or m3 screws torqued to hazardous material warning the ceramic portion of the device between leads and mounting surface is beryllium oxide- beo. beryllium oxide dust is toxic when in- haled. care must be taken during handling and mounting to avoid damage to this area these devices must never be thrown away with general industrial or domestic waste. d s g 13.56 mhz test ampARF1519 rf 12-04 j1 j2 t1 arf1518 beo 1525-100 parts placement - not to scale. ARF1519 -- 13.56 mhz test circuit l1 output c8 c9 c7 c10 l3 c4 c5 c6 200v l2 rf input t1 r1 c1-c3 1nf x7r 100v smtc4 2x 8.2 nf 1kv cog c5 270pf x2 atc 100c c7-c10 8.2 nf 1kv cog c11 390 + 27 pf atc 100c l1 2uh - 22t #24 enam. .312" dia. l2 368 nh - 5t #12 .625" dia .5" l l3 500nh 2t on 850u .5" bead r1 2.2k 0.5w t1 10:1t transformer c1 c2 c3 dut t = 4 - 6 in-lb (0.45 - 0.68 n-m). downloaded from: http:///
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