v ceo 25 v v cbo 40 v v ebo 6.0 v i c 1.5 a i b 500 ma total device dissipation t a = 25 o c junction and storage temperature description data sheet npn epitaxial planar transistor FA8050 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current (continuous) base current symbol value units p d 1.0 w t j , t stg -55 to 150 o c mechanical dimensions electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = 2.0ma) collector - base breakdown voltage (i c = 100 m a) emitter - base breakdown voltage (i e = 100 m a) collector cutoff current (v cb = 35v) emitter cutoff current (v eb = 6.0v) dc current gain (i c = 5.0 ma, v ce = 1.0 v) (i c = 100 ma, v ce = 1.0 v) (i c = 800 ma, v ce = 1.0 v) collector - emitter saturation voltage (i c = 0.8 a, i b = 80 ma) base - emitter saturation voltage (i c = 0.8 a, i b = 80 ma) base - emitter on voltage (v ce = 1.0 v, i c = 10 ma) current - gain - bandwidth product (i c = 50 ma, v ce = 10 v) v br(ceo) 25 --- v v br(cbo) 40 --- v v br(ebo) 6.0 --- v i cbo --- 0.1 m a i ebo --- 0.1 m a h fe --- 45 --- 85 500 40 --- v ce(sat) v --- 0.5 v be(sat) v --- 1.2 v be(on) v --- 1.0 f t 100 --- mhz to-92 classification of h fe2 rank b c d e range 85-160 120-200 160-300 250-500
data sheet FA8050 npn epitaxial planar transistor
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