features for surface mounted application low profile package built-in strain relief ideal for automated placement easy pick and place fast recovery time for high efficiency plastic material used carries underwriters laboratory classification 94v-0 mechanical data terminals: pure tin plated, lead free. polarity: indicated by cathode band packing: tape&reel weight: 0.093 gram approximately maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number units maximum recurrent peak reverse voltage v rrm maximum rms voltage v rms maximum dc blocking voltage v dc maximum average forward rectified current see fig. 1 i (av) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm maximum instantaneous forward voltage @ 8.0a v f maximum dc reverse current @t a =25 o c at rated dc blocking voltage @ t a =100 o c i r 10 50 ua ua maximum reverse recovery time ( note 1 ) typical junction capacitance ( note 2 ) cj 45 30 maximum thermal resistance (note 3) r ja r jl 75 20 operating temperature range t j -55 to +150 storage temperature range t stg -55 to +150 notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied v r =4.0 volts 3. units mounted on p.c.b. 0.4? x 0.4? (10mm x 10mm) pad areas pf 50 100 200 400 600 800 1000 v symbol FS10A fs10b fs10d fs10g fs10j fs10k fs10m 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 1.3 v 10.0 a 300 a trr ns 150 250 500 fr10a thru fr10m pb free plating product fr10a thru fr10m 10.0 ampere surface mount round lead fast recovery rectifier diodes pb ?? ?? ??/w ?? ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/2 rev.07c outline unit:inch(millimeter) hsmc/smc-w/smce dimensions inches mm dim min m a x min m a x note a .200 .214 5.08 5.43 b .177 .203 4. 7 05. 30 c .002 .005 .05 .13 d --- .02 --- .51 e. 047 .056 1. 20 1. 42 f .168 .179 4.27 4.55 g.3 09 . 322 7.85 8. 18 h .239 .243 6.08 6.18 j .234 .240 5.95 6.10 h j e f g a b d c cathode band 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 cases: hsmc(round lead)/sme pkg
fig.3- maximum non-repetitive peak forward surge current peak for ward surge current . (a) 1 10 100 300 0 150 number of cycles at 60hz 8.3ms single half sine wave (jedec method) at t =120 c l o fig.1- maximum forward current derating curve average for ward current . (a) 55 0 8.0 10.0 4.0 lead temperature. ( c) o resistive or inductive load 0.4x0.4"(10x10mm) copper pad areas 1 0 0 10 100 60 40 20 10 50 30 fig.4- typical junction capacitance junction cap acitance.(pf) reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 fig.2- typical reverse characteristics 0 20 40 60 80 100 120 140 10 100 1000 1 0.1 0.01 percent of rated peak reverse voltage. (%) tj=125 c 0 tj=85 c 0 tj=25 c 0 instantaneous reverse current .( a) fig.5- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 1 10 60 0.1 forward voltage. (v) tj=25 c pulse width-300 s 1% duty cycle 0 fig.6- reverse recovery time characteristic and test circuit diagram 50 noninductive non inductive oscilloscope (note 1) pulse generator (note 2) dut (+) 50vdc (approx) (-) notes: 1. rise time=7ns max. input impedance= 1 megohm 22pf 2. rise time=10ns max. sourse impedance= 50 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm fr10a thru fr10m 150 ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/2 rev.07c
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