q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet ? very low fom (r ds(on) xq g ) ? extremely low switching loss ? excellent stability and uniformity ? 100% avalanche tested d-pak (hcd65r600t) i-pak (HCU65R600T) d g s d g s parameter value unit bv dss @t j,max 700 v i d 7.5 a r ds(on), max 0.6
qg ,typ 14 nc key parameters package & internal circuit hcd65r600t / HCU65R600T 650v n-channel super junction mosfet features application ? switch mode power supply (smps) ? uninterruptible power supply (ups) ? power factor correction (pfc) ? tv power & led lighting power * when mounted on the minimum pad size recommended (pcb mount) thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 2.2 e /w r ja junction-to-ambient * -- 50 r ja junction-to-ambient -- 110 symbol parameter value units v dss drain-source voltage 650 v v gs gate-source voltage 30 v i d drain current ? continuous (t c = 25 e ) 7.5 a drain current ? continuous (t c = 100 e ) 4.7 a i dm drain current ? pulsed (note 1) 22 a e as single pulsed avalanche energy (note 2) 160 mj p d power dissipation (t a = 25 e ) * 2.5 w power dissipation (t c = 25 e ) 57 w t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e absolute maximum ratings t c =25 e unless otherwise specified dec 2015
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 7.5 a i sm pulsed source-drain diode forward current -- -- 22 v sd source-drain diode forward voltage i s = 7.5 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 7.5 a, v gs = 0 v di f /dt = 100 a/ v -- 300 -- qrr reverse recovery charge -- 2.4 -- & bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 10 3 v ds = 520 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 590 770 ? c oss output capacitance -- 41 54 ? c rss reverse transfer capacitance -- 6.5 8.5 ? dynamic characteristics t d(on) turn-on time v ds = 325 v, i d = 7.5 a, r g = 25 ? -- 18 46 t r turn-on rise time -- 20 50 t d(off) turn-off delay time -- 60 130 t f turn-off fall time -- 22 54 q g total gate charge v ds = 520 v, i d = 7.5 a v gs = 10 v -- 14.0 18.5 nc q gs gate-source charge -- 3.2 -- nc q gd gate-drain charge -- 4.2 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. i as =3.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. pulse test : pulse width ? v ' x w \ & \ f o h ? on characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a -- 0.54 0.6 ?
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 v ds = 325v v ds = 130v v ds = 520v
note : i d = 7.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 0481216 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 246810 0 5 10 15 20 -55 o c 25 o c * notes : 1. v ds = 10v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 0 5 10 15 20 25 0 5 10 15 20 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0.1 1 10 100 10 0 10 1 10 2 10 3 10 4 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c iss c oss capacitances [pf] v ds , drain-source voltage [v]
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0
note : 1. v gs = 10 v 2. i d = 2.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 2.2 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet package dimension k t w h r g o { v t y \ y h p g
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet package dimension p t w h r g o { v t y \ x h p g 7.0 0.1 / 9.5 0.2
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