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| RB715W schottky barrier diode features: power dissipation p d: 200 mw (tamb=25 ) collector current i f : 30 ma collector-base voltage v r : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 circuit: 1 3 2 marking: 3d electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 40 v reverse voltage leakage current i r v r =10v 1 a forward voltage v f i f =1ma 0.37 v diode capacitance c d v r =1v, f=1mhz 2 pf RB715W http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. 0.20 sot-523 1.60 1.00 0.30 1.60 0.50 0.81 r o hs wej electronic co.,ltd
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