tsm 40n03 pq56 3 0v n - channel power mosfet 1/4 version: a12 pdfn 56 product summary v ds (v) r ds(on) (m ) i d (a) 30 4.5 @ v gs =10v 19 5.8 @ v gs = 4.5 v 16 features advanced trench technology low on - resistance low gate charge typical @ 12n c (typ.) low crss typical @ 140pf (typ.) block diagram n- channel mosfet ordering information part no. package packing tsm 40n03pq56 rlg pdfn 56 2.5 k pcs / 13 reel note: g denote for halogen free product absolute maximum ratings ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - sourc e voltage v ds 30 v gate - source voltage v gs 20 v continuous drain current t c =25c i d 40 a t c =70c 40 t a =25c 31 t a =70c 25 drain current - pulsed note 1 i dm 100 a avalanche current, l=0.5mh i as , i ar 38 a avalanche energy, l=0.5m h e as , e ar 72 mj maximum power dissipation t c =25c p d 36 w t c =70c 23 t a =25c 4.2 t a =70c 2.7 storage temperature range t stg - 55 to +150 c operating junction temperature range t j - 55 to +150 c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 3.5 o c/w thermal resistance - junction to ambient r ? ja 30 o c/w note s : surface mounted on fr4 board t 10sec pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain downloaded from: http:///
tsm 40n03 pq56 3 0v n - channel power mosfet 2/4 version: a12 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdo wn voltage v gs = 0 v, i d = 250 a bv dss 30 -- -- v drain - source on - state resistance v gs = 10v, i d = 19 a r ds(on) -- 3. 5 4. 5 m v gs = 4.5 v, i d = 16 a -- 4.6 5.8 gate threshold voltage v ds = v gs , i d = 2 50 a v gs(th) 1.15 -- 2.2 v zero gate voltage drain cu rrent v ds = 24 v, v gs = 0v i dss -- -- 1 a gate body leakage v gs = 2 0v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 15 v, i d = 19 a, v gs = 4.5 v q g -- 12 -- nc gate - source charge q gs -- 5.4 -- gate - drain charge q gd -- 4.6 -- input capacitance v ds = 15 v, v gs = 0v, f = 1.0mhz c iss -- 1700 -- pf output capacitance c oss -- 350 -- reverse transfer capacitance c rss -- 140 -- switching turn - on delay time v gs = 4.5 v, v d s = 15 v, r g = 1 t d(on) -- 25 -- ns turn - on rise time t r -- 20 -- turn - off delay time t d(off) -- 25 -- turn - off fall time t f -- 15 -- drain - source diode characteristics and maximum rating drain - source diode forward voltage v gs =0v, i s =1 0a v sd -- 0.8 1. 2 v reverse recovery time i s = 1 0a , t j =25 o c di/dt = 100a/ s t fr -- 25 -- ns reverse recovery charge q fr -- 17 -- nc notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. r ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja shown below for single device operation on fr - 4 in still air 3. the maximum curr ent rating is limited by package. downloaded from: http:///
tsm 40n03 pq56 3 0v n - channel power mosfet 3/4 version: a12 pdfn 56 mechanical drawing unit: millimeters downloaded from: http:///
tsm 40n03 pq56 3 0v n - channel power mosfet 4/4 version: a12 notice specifications of the products displayed herein are subject to c hange without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a pro duct description only. no license, express or implied, to any intellectual p roperty rights is granted by this document. except as p rovided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products includin g liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyr ight, or other intellectual property right. the products shown herein are not designed for use i n medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improp er use or sale. downloaded from: http:///
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