sot-89-3l plastic-encapsulate transistors CJF715 transistor (npn) description the CJF715 are npn transisto rsmanufactured using planar technology resultingin rugged hi gh performance devices. features z voltage regulation z relay driver z generic switch marking: 715 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector -base voltage 140 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c continuous collector current 1.5 a p c collector dissipation 0.5 w r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 so t -89-3l 1. base 2. collector 3. emitter 1 of 2 sales@zpsemi.com www.zpsemi.com CJF715
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 140 v collector-emitter breakdown voltage v (br)ceo *i c =10ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5 v collector cut-off current(v be =0v) i ces v cb =140v,i e =0 500 ua collector cut-off current i ceo v cb =80v,i e =0 1 ma emitter cut-off current i ebo v eb =5v,i c =0 100 ua v ce =2v,i c =0.1a 140 v ce =2v,i c =0.5a 80 dc current gain h fe * v ce =2v,i c =1a 40 i c =100ma,i b =10ma 0.25 v collector-emitter saturation voltage v ce(sat) * i c =1a,i b =100ma 0.5 v i c =100ma,i b =10ma 1 v base-emitter saturation voltage v be(sat) * i c =1a,i b =100ma 1.1 v transition frequency f t v ce =10v,i c =100ma 50 mhz * pulse test: pulse width 300 s, duty cycle 2.0%. 2 of 2 sales@zpsemi.com www.zpsemi.com CJF715
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