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to learn more about on semiconductor, please visit our website at www.onsemi.com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the fairchild part numbers will be changed to a dash (-). this document may contain device numbers with an underscore (_). please check the on semiconductor website to verify the updated device numbers. the most current and up-to-date ordering information can be found at www.onsemi.com . please email any questions regarding the system integration to fairchild_questions@onsemi.com . is now part of on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifcally disclaims any and all liability, including without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifcations can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classifcation in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its offcers, employees, subsidiaries, affliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affrmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 1 FGH40T65UQDF 650 v, 40 a field stop trench igbt features ? maximum junction temperature: t j = 175 o c ? positive temperature co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.33 v ( typ.) @ i c = 40 a ? 100% of the parts tested for i lm (1) ? high input impedance ? fast switching ? tighten parameter distribution ? rohs compliant general description using novel field stop igbt technology, on semiconductor?s new series of field stop 4 th generation igbts offer superior con - duction and switching performance and easy parallel operation. this device is well suited for the resonant or soft switching application such as induction heating and mwo. applications ? induction heating, mwo absolute maximum ratings symbol description FGH40T65UQDF unit v ces collector to emitter voltage 650 v v ges gate to emitter voltage ? 20 v transient gate to emitter voltage ??30 v i c collector current @ t c = 25 o c 80 a collector current @ t c = 100 o c 40 a i lm (1) pulsed collector current @ t c = 25 o c 120 a i cm (2) pulsed collector current 120 a i f diode forward current @ t c = 25 o c 40 a diode forward current @ t c = 100 o c 20 a i fm pulsed diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 o c 231 w maximum power dissipation @ t c = 100 o c 115 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c notes: 1. v cc = 400 v, v ge = 15 v, i c = 120 a, r g = 20 ? , inductive load 2. repetitive rating: pulse width limited by max. junction temperature collector (flange) e c g g e c december 2016
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 2 thermal characteristics symbol parameter FGH40T65UQDF unit r ? jc (igbt) thermal resistance, junction to case, max. 0.65 o c / w r ? jc (diode) thermal resistance, junction to case, max. 1.75 o c / w r ? ja thermal resistance, junction to ambient, max. 40 o c / w package marking and ordering information device marking device package reel size tape width qty per tube FGH40T65UQDF FGH40T65UQDF_f155 to-247 g03 - - 30 electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 1 ma 650 - - v ?bv ces / ?????t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 1 ?ma - 0.52 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 ?a i ges g-e leakage current v ge = v ges , v ce = 0 v - - ??400 na on characteristics v ge(th) g-e threshold voltage i c = 40 ma, v ce = v ge 2.5 4.0 5.5 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v - 1.33 1.67 v i c = 40 a , v ge = 15 v, t c = 175 o c - 1.5 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 7309 - pf c oes output capacitance - 58 - pf c res reverse transfer capacitance - 30 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 ? , v ge = 15 v, inductive load, t c = 25 o c - 32 - ns t r rise time - 18 - ns t d(off) turn-off delay time - 271 - ns t f fall time - 11 - ns e on turn-on switching loss - 989 - ? j e off turn-off switching loss - 310 - ? j e ts total switching loss - 1299 - ? j t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 ? , v ge = 15 v, inductive load, t c = 175 o c - 30 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 298 - ns t f fall time - 16 - ns e on turn-on switching loss - 1400 - ? j e off turn-off switching loss - 553 - ? j e ts total switching loss - 1953 - ? j
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 3 electrical characteristics of the igbt (continued) symbol parameter test conditions min. typ. max. unit q g total gate charge v ce = 400 v, i c = 40 a, v ge = 15 v - 306 - nc q ge gate to emitter charge - 30 - nc q gc gate to collector charge - 77 - nc electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 20 a t c = 25 o c - 1.5 1.95 v t c = 175 o c - 1.39 - e rec reverse recovery energy i f = 20 a, di f /dt = 200 a/ ?s t c = 175 o c - 115 - ?j t rr diode reverse recovery time t c = 25 o c - 89 - ns t c = 175 o c - 251 - q rr diode reverse recovery charge t c = 25 o c - 289 - nc t c = 175 o c - 1502 -
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 4 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant current leve l figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 5 typical performance characteristics figure 7. capacitance characteristics figure 8. gate charge characteristics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistance figure 11. switching loss vs. figure 12. turn-on characteristics vs. gate resistance collector current
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 6 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. switching loss vs. collector current collector current figure 15. load current vs. frequency figure 16. soa characteristics figure 17. forward characteristics figure 18. reverse recovery current
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 7 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21.transient thermal impedance of igbt figure 22.transient thermal impedance of diode t 1 p dm t 2 t 1 p dm t 2
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 8 mechanical dimensions
FGH40T65UQDF ? 650 v, 40 a field stop trench igbt semiconductor components industries, llc, 2016 www.fa irchilds e mi.com FGH40T65UQDF ? re v. 1.0 www.ons e mi.com 9 on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade se crets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semicon ductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee reg arding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. buyer is responsible for its prod ucts and applications using on semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or ap plications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer appli cation by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are no t designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or simila r classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such un intended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or dea th associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the par t. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information literature fulfillment: literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax: 303-675-2176 or 800-344-3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800-282-9855 toll free usa/canada. europe, middle east and africa technical support : phone: 421 33 790 2910 japan customer focus center phone: 81-3-5817-1050 on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc

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