copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 www.ruichips.com RU306C n-channel advanced power mosfet features pin description applications symbol parameter rating unit common ratings (t a =25c unless otherwise noted) v dss drain-source voltage 30 v v gss gate-source voltage 12 t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c i s diode continuous forward current t a =25c 1.3 a mounted on large heat sink i dp 300 s pulse drain current tested t a =25c 20 a i d continuous drain current(v gs =10v) t a =25c 5 a t a =70c 3.8 p d maximum power dissipation t a =25c 1.25 w t a =70c 0.8 r ? ja thermal resistance-junction to ambient 100 c/w ? 30v/5a, r ds (on) =30m ? (typ.) @ v gs =10v r ds (on) =38m ? (typ.) @ v gs =4.5v r ds (on) =110m ? (typ.) @ v gs =2.5v ? low r ds (on) ? super high dense cell design ? reliable and rugged ? lead free and green available ? dc/dc converter ? load switch absolute maximum ratin g s sot23-3 n-channel mosfet
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 2 www.ruichips.com RU306C electrical characteristics (t a =25c unless otherwise noted) symbol parameter test condition RU306C unit min. typ. max. static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 ? a 30 v i dss zero gate voltage drain current v ds =30v, v gs =0v 1 ? a t j =85c 30 v gs(th) gate threshold voltage v ds =v gs , i ds =250 ? a 0.6 1 1.5 v i gss gate leakage current v gs =12v, v ds =0v 100 na r ds(on) drain-source on-state resistance v gs =10v, i ds =6a 30 35 m ? v gs =4.5v, i ds =5a 38 42 v gs =2.5v, i ds =4a 110 150 notes: pulse width limited by safe operating area. when mounted on 1 inch square copper board, t ? 10sec. the value in any given application depends on the user's specific board design. pulse test ; pulse width ? 300 ? s, duty cycle ? 2%. guaranteed by design, not subject to production testing. diode characteristics v sd diode forward voltage i sd =1a, v gs =0v 1 v t rr reverse recovery time i sd =1a, dl sd /dt=100a/ ? s 13 ns q rr reverse recovery charge 10 nc d y namic characteristics r g gate resistance v gs =0v,v ds =0v,f=1mhz 3 ? c iss input capacitance v gs =0v, v ds =15v, frequency=1.0mhz 295 pf c oss output capacitance 66 c rss reverse transfer capacitance 24 t d(on) turn-on delay time v dd =15v, r l =15 ? , i ds =1a, v gen =10v, r g =1 ? 8 ns t r turn-on rise time 12 t d(off) turn-off delay time 19 t f turn-off fall time 7 gate charge characteristics q g total gate charge v ds =24v, v gs =10v, i ds =1a 6.8 nc q gs gate-source charge 1.2 q gd gate-drain charge 2.4
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 3 www.ruichips.com RU306C typical characteristics power dissipation drain current p tot - power (w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain-source voltage (v) square wave pulse duration (sec)
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 4 www.ruichips.com RU306C typical characteristics output characteristics drain-source on resistance i d - drain current (a) r ds(on) - on resistance (m ? ) v ds - drain-source voltage (v) i d - drain current (a) drain-source on resistance gate threshold voltage r ds(on) - on - resistance (m ? ) normalized threshold voltage v gs - gate-source voltage (v) t j - junction temperature (c)
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 5 www.ruichips.com RU306C typical characteristics drain-source on resistance source-drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source-drain voltage (v) capacitance gate charge c - capacitance (pf) v gs - gate-source voltage (v) v ds - drain-source voltage (v) q g - gate charge (nc)
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 6 www.ruichips.com RU306C avalanche test circ uit and waveforms switching time test circuit and waveforms
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 7 www.ruichips.com RU306C ordering and marking information device marking package packaging quantity reel size tape width RU306C 7xyww sot23-3 tape&reel 3000 7?? 8mm the following characters could be different and means: x =assembly site code y =year ww =work week
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 8 www.ruichips.com RU306C package information sot23-3 all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min max min max min max min max a 1.050 1.250 0.041 0.049 e 1.500 1.700 0.059 0.067 a1 0.0000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 1.050 1.150 0.041 0.045 e 0.950(bsc) 0.037(bsc) b 0.300 0.500 0.012 0.020 e1 1.800 2.000 0.071 0.079 c 0.100 0.200 0.004 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8
copyright ? ruichips semiconductor co., ltd rev. a? dec., 2012 9 www.ruichips.com RU306C customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.com hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
|
