features applications 1 h igh diode semiconductor HDK3401A ?? ? marking: sot-23-3l plastic-encapsulate mosfet d g sot- 23 - 3 l ? r1a p roduct summary s high dense cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability load/power switching interfacing switching p - channel mosfet v (br)dss r ds(on) max i d - 30 v 60 m @ - 10 v ? -4.2 a ? 70 m @ - 4 .5v 85 m @ - 2 . 5 v parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v conti nuo us dr ain c u rrent i d -4.2 a power dissipation p d 4 5 0 mw thermal resistance from junction to ambient ( t<5s )r ja 3 13 /w junctio n t e mperature t j 150 storage temperature t stg -55~+150
2 h igh diode semiconductor electrical ch aracteristics (t a =25 unless otherwise noted) parameter symbol test conditi on min typ max unit off characteristics drain-source breakd o wn voltage v (br)dss v gs = 0v, i d =-250a -30 v zero gate voltage drain curre nt i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics v gs =-10v, i d =-4.2a 60 m ? v gs =-4.5v, i d =-4a 70 m ? drain-source on-resistan ce (note 1) r ds(on) v gs =-2.5v,i d =-1a 85 m ? forward tranc o nductance (note 1) g fs v ds =-5v, i d =-5a 7 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.7 -1.3 v dynamic cha r acteristics (note 2) input capacitance c iss 1050 pf output capacitance c oss 127 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 85 pf switching cha r acteristics (note 2) turn-on delay ti me t d(on) 6.5 ns turn-on rise time t r 3.5 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ? ,r gen =6 ? 13 ns drain-source d iode characteristics and maximum ratings diode forward voltag e (note 1 ) v sd i s =-1a,v gs =0v -1 v note : 1. pulse test : pulse wi dth 300s, duty cycle 2%. 2. these parameters have no way to verify.
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