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this is information on a product in full production. march 2015 docid023752 rev 4 1/17 STGW25H120DF2, stgwa25h120df2 trench gate field-stop igbt, h series 1200 v, 25 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 25 a ? 5 s minimum short circuit withstand time at t j =150 c ? safe paralleling ? very fast recovery antiparallel diode ? low thermal resistance applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate field-stop structure. these devices are part of the h series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. moreover, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 72 72orqjohdgv table 1. device summary order code marking package packaging STGW25H120DF2 g25h120df2 to-247 tube stgwa25h120df2 g25h120df2 to-247 long leads tube www.st.com
contents STGW25H120DF2, stgwa25h120df2 2/17 docid023752 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-247, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247 long leads, package information . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid023752 rev 4 3/17 STGW25H120DF2, stgwa25h120df2 electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 50 a continuous collector current at t c = 100 c 25 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 100 a v ge gate-emitter voltage 20 v i f continuous collector current at t c = 25 c 50 a continuous collector current at t c = 100 c 25 a i fp (1) pulsed forward current 100 a p tot total dissipation at t c = 25 c 375 w t j operating junction temperature ? 55 to 175 c t stg storage temperature range ? 55 to 150 table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.47 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW25H120DF2, stgwa25h120df2 4/17 docid023752 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 25 a 2.1 2.6 v v ge = 15 v, i c = 25 a t j = 125 c 2.4 v ge = 15 v, i c = 25 a t j = 175 c 2.5 v f forward on-voltage i f = 25 a 3.8 4.9 v i f = 25 a, t j = 125 c 3.05 i f = 25 a, t j = 175 c 2.8 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2010- pf c oes output capacitance - 146 - pf c res reverse transfer capacitance -49-pf q g total gate charge v cc = 960 v, i c = 25 a, v ge = 15 v, see figure 29 -100-nc q ge gate-emitter charge - 11 - nc q gc gate-collector charge - 52 - nc
docid023752 rev 4 5/17 STGW25H120DF2, stgwa25h120df2 electrical characteristics 17 table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, see figure 28 -29-ns t r current rise time - 12 - ns (di/dt) on turn-on current slope - 1774 - a/s t d(off) turn-off delay time 130 - ns t f current fall time - 106 - ns e on (1) 1. energy losses include reverse recovery of the external diode. turn-on switching losses - 0.6 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 0.7 - mj e ts total switching losses - 1.3 - mj t d(on) turn-on delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 28 - 27.5 - ns t r current rise time - 13.5 - ns (di/dt) on turn-on current slope - 1522 - a/s t d(off) turn-off delay time - 139 - ns t f current fall time - 200 - ns e on (1) turn-on switching losses - 1.05 - mj e off (2) turn-off switching losses - 1.65 - mj e ts total switching losses - 2.7 - mj t sc short-circuit withstand time v ce = 600 v, v ge = 15 v, t j = 150 c, 5-s table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 25 a, v r = 600 v, di/dt=500 a/s , v ge = 15 v, see figure 28 -303-ns q rr reverse recovery charge - 0.93 - c i rrm reverse recovery current - 15.3 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -400-a/s e rr reverse recovery energy - 0.52 - mj t rr reverse recovery time i f = 25 a, v r = 600 v, di/dt=500 a/s , v ge = 15 v, t j = 175 c, see figure 28 -508-ns q rr reverse recovery charge - 2.71 - c i rrm reverse recovery current - 23 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -680-a/s e rr reverse recovery energy - 1.56 - mj
electrical characteristics STGW25H120DF2, stgwa25h120df2 6/17 docid023752 rev 4 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature 3 wrw 7 & ?& : 9 *( ?97 - ??& *,3*)65 , & 7 & ?& $ 9 *( ?97 - ??& *,3*)65 figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 9 &(vdw 7 - ?& 9 9 *( 9 , & $ , & $ , & $ *,3*)65 9 &(vdw , & $ 9 9 *( 9 7 - ?& 7 - ?& 7 - ?& *,3*)65
docid023752 rev 4 7/17 STGW25H120DF2, stgwa25h120df2 electrical characteristics 17 figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area ,f>$@ i>n+]@ * ? uhfwdqjxodufxuuhqwvkdsh gxw\f\foh 9 && 95 9 *( 97 - ?& 7f ? & 7f ? & *,3*)65 , & 9 &( 9 $ ?v ?v pv 6lqjohsxovh 7f ?&7 - ??& 9 *( 9 ?v *,3*)65 figure 10. transfer characteristics figure 11. normalized v ge(th) vs junction temperature , & 9 *( 9 $ 7 - ?& 7 - ?& 9 &( 9 *,3*)65 9 *(wk 7 - ?& qrup , & p$ 9 &( 9 *( *,3*)65 figure 12. normalized v (br)ces vs. junction temperature figure 13. capacitance variation 9 %5&(6 7 - ?& qrup , & p$ *,3*)65 & 9 &( 9 s) & lhv & rhv & uhv i 0+]9 *( *,3*)65
electrical characteristics STGW25H120DF2, stgwa25h120df2 8/17 docid023752 rev 4 figure 14. gate charge vs. gate-emitter voltage figure 15. switching loss vs collector current 9 *( 4 j q& 9 , & $ , *( p$ 9 && 9 *,3*)65 ( , & $ ?- ( 21 9 && 99 *( 9 5 * 7 - ?& ( 2)) *,3*)65 figure 16. switching loss vs gate resistance figure 17. switching loss vs temperature ( 5 * ?- ( 2)) 9 && 99 *( 9 , & $7 - ?& ( 21 *,3*)65 ( 7 - ?& ?- ( 2)) 9 && 99 *( 9 5 * , & $ ( 21 *,3*)65 figure 18. switching loss vs collector-emitter voltage figure 19. switching times vs. collector current ( 9 &( 9 ?- ( 2)) 7 - ?&9 *( 9 5 * , & $ ( 21 *,3*)65 w , & $ qv w i 7 - ?&9 *( 9 5 * 9 && 9 w grii w u w grq *,3*)65
docid023752 rev 4 9/17 STGW25H120DF2, stgwa25h120df2 electrical characteristics 17 figure 20. switching times vs. gate resistance figure 21. reverse recovery current vs. diode current slope w 5 * qv w i 7 - ?&9 *( 9 , & $9 && 9 w grq w grii w u *,3*)65 , up glgw$?v $ , ) $9 && 9 *,3*)65 figure 22. reverse recovery time vs. diode current slope figure 23. reverse recovery charge vs. diode current slope w uu glgw$?v qv 9 && 99 *( 9 7 - ?&, ) $ *,3*)65 4 uu glgw$?v q& 9 && 99 *( 9 7 - ?&, ) $ *,3*)65 figure 24. reverse recovery energy vs. diode current slope figure 25. diode v f vs. forward current ( uu glgw$?v ?- 9 && 99 *( 9 7 - ?&, ) $ *,3*)65 9 ) , ) $ 9 7 - ?& 7 - ?& 7 - ?& *,3*)65
electrical characteristics STGW25H120DF2, stgwa25h120df2 10/17 docid023752 rev 4 figure 26. thermal impedance for igbt figure 27. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid023752 rev 4 11/17 STGW25H120DF2, stgwa25h120df2 test circuits 17 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode reverse recovery waveform am01505v1 k k k k k k am01507v1 i rrm i f di/dt t rr t s t f q rr i rrm t v rrm dv/dt 10%
package information STGW25H120DF2, stgwa25h120df2 12/17 docid023752 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack? is an st trademark. 4.1 to-247, package information figure 32. to-247 outline 0075325_h
docid023752 rev 4 13/17 STGW25H120DF2, stgwa25h120df2 package information 17 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package information STGW25H120DF2, stgwa25h120df2 14/17 docid023752 rev 4 4.2 to-247 long leads, package information figure 33. to-247 long leads outline 8463846_a_f
docid023752 rev 4 15/17 STGW25H120DF2, stgwa25h120df2 package information 17 table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.905.005.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b1.16 1.26 b2 3.25 b3 2.25 c0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e5.345.445.54 l 19.80 19.92 20.10 l1 4.30 p3.503.603.70 q5.60 6.00 s6.056.156.25
revision history STGW25H120DF2, stgwa25h120df2 16/17 docid023752 rev 4 5 revision history table 10. document revision history date revision changes 03-oct-2012 1 initial release. 28-feb-2014 2 updated title and features in cover page. minor text changes. 31-mar-2014 3 document status promoted from preliminary to production data. updated table 4: static characteristics and table 6: igbt switching characteristics (inductive load) . added section 2.1: electrical characteristics (curves) . 06-mar-2015 4 added 4.2: to-247 long leads, package information minor text changes.
docid023752 rev 4 17/17 STGW25H120DF2, stgwa25h120df2 17 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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