? 2018 ixys corporation, all rights reserved ds100912a(5/18) IXFP34N60X2A v dss = 600v i d25 = 34a r ds(on) ? ? ? ? ? 100m ? ? ? ? ? features ? international standard package ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 2.5ma 3.5 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 1.75 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 100 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 600 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 600 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c34a i dm t c = 25 ? c, pulse width limited by t jm 68 a i a t c = 25 ? c10a e as t c = 25 ? c1j dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c 540 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight 3 g n-channel enhancement mode avalanche rated x2-class hiperfet tm power mosfet aec q101 qualified g d s to-220 g = gate d = drain s = source tab = drain d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFP34N60X2A ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 34 a i sm repetitive, pulse width limited by t jm 136 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 164 ns q rm 1.2 ???????????? c i rm 14.4 a i f = 17a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 12 20 s r gi gate input resistance 0.8 ? c iss 3230 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 2000 pf c rss 2 pf c o(er) 130 pf c o(tr) 486 pf t d(on) 37 ns t r 60 ns t d(off) 64 ns t f 30 ns q g(on) 56 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 19 nc q gd 18 nc r thjc 0.23 ? c/w r thcs 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss notes: 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. pins: 1 - gate 2 - drain 3 - source to-220 outline
? 2018 ixys corporation, all rights reserved ixfp34n60x2 fig. 1. output characteristics @ t j = 25 o c 0 5 10 15 20 25 30 35 00.511.522.533.5 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ t j = 125 o c 0 5 10 15 20 25 30 35 0123456789 v ds - volts i d - amperes v gs = 10v 9v 7v 5v 6v 4v 8v fig. 4. r ds(on) normalized to i d = 17a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 17a i d = 34a fig. 5. r ds(on) normalized to i d = 17a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 0 1020304050607080 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 8v 9v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXFP34N60X2A fig. 8. input admittance 0 5 10 15 20 25 30 35 40 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 7. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c fig. 10. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 11. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = 300v i d = 17a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mh z c iss c rss c oss
? 2018 ixys corporation, all rights reserved ixfp34n60x2 fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 14. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c sin g le pulse 25 s 100 s r ds( on ) limi t 1ms fig. 13. output capacitance stored energy 0 5 10 15 20 25 30 0 100 200 300 400 500 600 v ds - volts e oss - microjoules ixys ref: f_34n60x2 (x5-s602) 1-16-18
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