, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU607D description ? high voltage: vcev= 330v(min) ? fast switching speed- " : tf= 0.75 u s(max) ? low saturation voltage- :vce(satr 1.0v(max)@lc=5a applications ? designed for use in horizontal deflection output stages of tv's and crt's absolute maximum ratings(ta=25'c) symbol vcbo vcev voeo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current collector power dissipation @ tc=25"c junction temperature storage temperature range value 330 330 150 6 7 10 4 60 150 -65-150 unit v v v v a a a w -c r >t . ?^-t1||||||-' -s^ 3 -4 1 w, ? i? q 2 1 ** pin lease i 2 bulltter j 3. collect or (case) to-3 package i i ie "& t v dim a b __ d e g k k l n q u v a m i i i ^pl /^b rt~n/ * t . ^ ca tt , | ^ , {3h iran min ma 3900 25.30 26.( 9.30 11.1 0.90 1 .1 2.90 3.' 10.92 546 11.40 13.: 16.75 17x 19.40 19.< 400 4. 30.00 30 430 4. x j7 0 0 10 tt 52 20 20 so . nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BU607D electrical characteristics tc=25*c unless otherwise specified symbol vceo(sus) vce(sat) vee(sat) hfe icev iebo fi vecf tf parameter collector-emitter sustaining voltage ? collector-emitter saturation voltage base-emitter saturation voltage dc current gain collector cutoff current emitter cutoff current current-gain ? bandwidth product c-e diode forward voltage fall time conditions lc= 100ma ;ib=0 |c= 5a; |b= 0.65a lc= 5a; ib= 0.65a lc= 2a; vce= 5v; vce= 330v; vbe= -1.5v veb= 6v; lc= 0 \c= 0.5a ; vce= 1 0v, f,est= 1 mhz if=5a \c= 5a; ib1= ~ib2= 0.65a, vcc= 40v min 150 10 typ. 15 max 1.0 1.3 15 400 1.5 0.75 unit v v v ma ma mhz v u s
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