1 IPT210N25NFD rev.2.0,2016-01-11 final data sheet hsof mosfet optimos a 3power-transistor ,250v features ?n-channel,normallevel ?fastdiode(fd)withreducedq rr ?optimizedforhardcommutationruggedness ?verylowon-resistance r ds(on) ?175coperatingtemperature ?pb-freeleadplating;rohscompliant ?qualifiedaccordingtojedec 1) fortargetapplication ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 250 v r ds(on),max 21.0 m w i d 69 a type/orderingcode package marking relatedlinks IPT210N25NFD pg-hsof-8 210n25nf - 1) j-std20 and jesd22 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
2 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
3 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet 1maximumratings at t a =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - 69 54 a t c =25c t c =100c pulsed drain current 1) i d,pulse - - 276 a t c =25c avalanche energy, single pulse e as - - 610 mj i d =37a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 375 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - 0.2 0.4 k/w - thermal resistance, junction - ambient, minimal footprint r thja - - 62 k/w - thermal resistance, junction - ambient, 6 cm 2 cooling area 2) r thja - - 40 k/w - 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 250 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2 3 4 v v ds = v gs , i d =267a zero gate voltage drain current i dss - - 0.1 10 1 100 a v ds =200v, v gs =0v, t j =25c v ds =200v, v gs =0v, t j =125c gate-source leakage current i gss - 1 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - 18.0 21.0 m w v gs =10v, i d =69a gate resistance 3) r g - 2.8 4.2 w - transconductance g fs 70 139 - s | v ds |>2| i d | r ds(on)max , i d =69a 1) see diagram 3 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 3) defined by design. not subject to production test. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
4 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 5300 7000 pf v gs =0v, v ds =125v, f =1mhz output capacitance c oss - 300 400 pf v gs =0v, v ds =125v, f =1mhz reverse transfer capacitance c rss - 6 9.4 pf v gs =0v, v ds =125v, f =1mhz turn-on delay time t d(on) - 13 - ns v dd =125v, v gs =10v, i d =34.5a, r g,ext =1.6 w rise time t r - 13 - ns v dd =125v, v gs =10v, i d =34.5a, r g,ext =1.6 w turn-off delay time t d(off) - 43 - ns v dd =125v, v gs =10v, i d =34.5a, r g,ext =1.6 w fall time t f - 13 - ns v dd =125v, v gs =10v, i d =34.5a, r g,ext =1.6 w table6gatechargecharacteristics 2) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 24 - nc v dd =125v, i d =69a, v gs =0to10v gate to drain charge 1) q gd - 8 - nc v dd =125v, i d =69a, v gs =0to10v switching charge q sw - 16 - nc v dd =125v, i d =69a, v gs =0to10v gate charge total 1) q g - 65 86 nc v dd =125v, i d =69a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =125v, i d =69a, v gs =0to10v output charge 1) q oss - 144 - nc v dd =125v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continous forward current i s - - 69 a t c =25c diode pulse current i s,pulse - - 276 a t c =25c diode forward voltage v sd - 0.9 1.2 v v gs =0v, i f =69a, t j =25c reverse recovery time 1) t rr - 134 268 ns v r =125v, i f = i s ,d i f /d t =100a/s reverse recovery charge 1) q rr - 406 - nc v r =125v, i f = i s ,d i f /d t =100a/s 1) defined by design. not subject to production test. 2) see 2 gate charge waveforms 2 for parameter definition t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
5 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 50 100 150 200 250 300 350 400 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 20 40 60 80 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
6 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 4 5 0 50 100 150 200 10 v 8 v 7 v 6.5 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 50 100 150 0 10 20 30 40 4.5 v 5 v 5.5 v 6 v 8 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 50 100 150 200 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 40 80 120 160 0 20 40 60 80 100 120 140 160 180 200 g fs =f( i d ); t j =25c t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
7 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 10 20 30 40 50 60 70 98% typ r ds(on) =f( t j ); i d =69a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2670 a 267 a v gs(th) =f( t j ); v gs = v ds ;parameter: i d diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 80 100 120 140 160 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c 25c, 98% 175c, 98% i f =f( v sd );parameter: t j t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
8 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet diagram13:avalanchecharacteristics t av [s] i as [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 20 40 60 80 0 2 4 6 8 10 200 v 125 v 50 v v gs =f( q gate ); i d =69apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 220 230 240 250 260 270 280 290 v br(dss) =f( t j ); i d =1ma t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms
9 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet 5packageoutlines figure1outlinepg-hsof-8 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2
10 optimos a 3power-transistor ,250v IPT210N25NFD rev.2.0,2016-01-11 final data sheet revisionhistory IPT210N25NFD revision:2016-01-11,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-01-11 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2
|
