? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c2a i dm t c = 25 c, pulse width limited by t jm 8a i a t c = 25 c2a e as t c = 25 c 150 mj dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 100 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ds97540b(04/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 100 ? r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 7 high voltage mosfet n-channel enhancement mode avalanche rated IXTA2N100 ixtp2n100 v dss = 1000v i d25 = 2a r ds(on) 7 features z international standard packages z avalanche rated z low package inductance (< 5nh) z fast switching times advantages z easy to mount z space savings z high power density applications z switched-mode and resonant-mode power supplies z flyback inverters z dc choppers g = gate d = drain s = source tab = drain to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA2N100 ixtp2n100 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 1.5 2.5 s c iss 825 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 58 pf c rss 15 pf t d(on) 20 ns t r 23 ns t d(off) 34 ns t f 21 ns q g(on) 18.0 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 3.7 nc q gd 8.2 nc r thjc 1.25 c/w r thcs (to-220) 0.50 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 20 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 2 a i sm repetitive, pulse width limited by t jm 8 a v sd i f = 2a, v gs = 0v, note 1 1.5 v t rr 800 ns i f = 2a, -di/dt = 100a/ s, v r = 100v
? 2009 ixys corporation, all rights reserved IXTA2N100 ixtp2n100 fig. 1. output characteristics @ 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0123456789101112 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6 v fig. 2. extended output characteristics @ 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 7v 6 v 5 v fig. 3. output characteristics @ 125oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 6v 5 v fig. 4. r ds(on) normalized to i d = 1a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 2a i d = 1a fig. 5. r ds(on) normalized to i d = 1a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA2N100 ixtp2n100 ixys ref: t_2n100(3x-g68)4-16-09 fig. 7. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 1012141618 q g - nanocoulombs v gs - volts v ds = 500v i d = 1a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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