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? 2010 microchip technology inc. ds21488b-page 1 tcm828/tcm829 features charge pump in 5-pin sot-23 package >95% voltage conversion efficiency voltage inversion and/or doubling low 50 a (tcm828) quiescent current operates from +1.5v to +5.5v up to 25 ma output current only two external capacitors required applications lcd panel bias cellular phones pagers pdas, portable dataloggers battery-powered devices typical application circuit description the tcm828/tcm829 devices are cmos charge- pump voltage converters in ultra-small, 5-pin sot-23 packages. they invert and/or double an input voltage which can range from +1.5v to +5.5v. conversion efficiency is typically >95%. switching frequency is 12 khz for the tcm828, and 35 khz for the tcm829. external component requirement is only two capacitors (3.3 f nominal) for standard voltage inverter applications. with a few additional components, a positive doubler can also be built. all other circuitry, including control, oscillator and power mosfets, are integrated on-chip. supply current is 50 a (tcm828) and 115 a (tcm829). the tcm828 and tcm829 devices are available in a 5-pin sot-23 surface mount package. package type ordering information v in v - output c + c - c1 c 2 input gnd tcm828/tcm829 voltage inverter out part no. package temperature range tcm828ect 5-pin sot-23 -40c to +85c tcm828vt 5-pin sot-23 -40c to +125c tcm829ect 5-pin sot-23 -40c to +85c note: 5-pin sot-23 is equivalent to eiaj sc-74a. c + 1 2 3 5 gnd 4 c - out v in tcm828/tcm829 sot-23 switched capacitor voltage converters downloaded from: http:///
tcm828/tcm829 ds21488b-page 2 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 3 tcm828/tcm829 1.0 electrical characteristics absolute maximum ratings ? input voltage (v in to gnd) .................................. +30v output voltage (out to gnd) ...................6.0v, +0.3v current at out pin ............................................ 50 ma short-circuit duration C out to gnd ............indefinite operating temperature range ................ - 40c to +85c variable temp. range ( tcm828 only ) ............................... .............................................................................- 40c to +125c power dissipation (t a 70c) ........................ 240 mw storage temperature (unbiased) ..........- 65c to +150c lead temperature (soldering, 10 sec)............ +300c ? notice: stresses above those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. electrical characteristics (0c to +85c) electrical specifications: t a = 0c to +85c, v in = +5v, c1 = c2 = 10 f (tcm828), c1 = c2 = 3.3 f (tcm829), unless otherwise noted. typical values are at t a = +25c. parameters sym min typ max units conditions supply current i dd 5 09 0 a tcm828, t a = +25c 115 260 a tcm829 , t a = +25c minimum supply voltage v + 1.5 v r load = 10 k , t a = 0c to +85c maximum supply voltage v + 5 . 5 vr load = 10 k oscillator frequency f osc 8.4 12 15.6 khz tcm828, t a = +25c 24.5 35 45.5 khz tcm829 , t a = +25c power efficiency p eff 9 6 %i load = 3 ma,t a = +25c voltage conversion efficiency v eff 95 99.9 % r load = output resistance r out 2 55 0 i out = 5 ma,t a = +25c 6 5 i out = 5 ma,t a = 0c to +85c note 1: capacitor contribution is approximately 20% of the output impedance [esr = 1/pump frequency x capacitance)]. electrical characteristics (-40c to +85c) electrical specifications: t a = -40c to +85c, v in = +5v, c1 = c2 = 10 f (tcm828), c1 = c2 = 3.3 f (tcm829), unless otherwise noted. typical values are at t a = +25c. (note 1) parameters sym min typ max units conditions supply current i dd 1 1 5 a tcm828 325 a tcm829 supply voltage range v + 1.5 5.5 v r load = 10 k oscillator frequency f osc 61 5 . 6k h z tcm828 19 45.5 khz tcm829 output resistance r out 6 5 i out = 5 ma note 1: all -40c to +85c specifications above are assured by design. downloaded from: http:///
tcm828/tcm829 ds21488b-page 4 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 5 tcm828/tcm829 2.0 typical characteristics note: circuit of figure 5-3 , v in = +5v, c1 = c2 = c3, t a = +25c, unless otherwise noted. figure 2-1: output resistance vs. supply voltage. figure 2-2: output resistance vs. temperature. figure 2-3: tcm828 ? output current vs. capacitance. figure 2-4: tcm829 ? output current vs. capacitance. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified- operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 60 50 40 30 20 0 10 1.5 2.5 3.5 4.5 supply voltage (v) 70 output resistance ( ) tcm829 tcm828 7060 50 4030 0 2010 ?40 c 0 c 25 c8 5 c temperature ( c) 80 output resistance ( ) v in = 1.5v v in = 3.3v v in = 5.0v 4035 30 25 20 50 1510 0 10 20 30 40 capacitance ( f) output current (ma) v in = 4.75v, v out = ? 4.0v v in = 3.15v, v out = ? 2.5v v in = 1.9v, v out = ?1.5v 35 30 25 20 5 0 1510 0 10 5 15 20 25 35 30 capacitance (f) 40 output current (ma) v in = 4.75v, v ? = ? 4.0v v in = 1.9v, v out = ? 1.5v v in = 3.15v, v ? = ? 2.5v downloaded from: http:///
tcm828/tcm829 ds21488b-page 6 ? 2010 microchip technology inc. note: circuit of figure 5-3 , v in = +5v, c1 = c2 = c3, t a = +25c, unless otherwise noted. figure 2-5: tcm828 ? output voltage ripple vs. capacitance. figure 2-6: tcm829 ? output voltage ripple vs. capacitance. figure 2-7: supply current vs. supply voltage. figure 2-8: tcm828 ? pump frequency vs. temperature. figure 2-9: tcm829 ? pump frequency vs. temperature. figure 2-10: output voltage vs. output current. 450 400 350 300 250 50 0 200150 100 0 10 52 5 20 25 30 35 capacitance ( f) output voltage ripple (mvp-p) v in = 4.75v, v out = ? 4.0v v in = 3.15v, v out = ? 2.5v v in = 1.9v, v out = ? 1.5v 0 10 51 5 2 0 30 35 capacitance ( f) 300250 200 150 100 50 0 output voltage ripple (mvp-p) v in = 4.75v, v out = ? 4.0v v in = 3.15v, v out = ? 2.5v v in = 1.9v, v out = ? 1.5v 100 80 60 40 20 0 1.5 2.5 3 2 3.5 4 4.5 5 5.5 supply voltage (v) 120 supply current ( a) tcm829 tcm828 14 12 10 8 2 0 64 ?40 0 c2 5 c8 5 c temperature ( c) pump frequency (khz) 5 v in = 5.0v v in = 3.3v v in = 1.5v ?40 c0 c2 5 c8 5 c 40 30 35 2015 25 0 10 5 temperature ( c) 45 pump frequency (khz) v in = 5.0v v in = 3.3v v in = 1.5v ?1 ?2?3 ?4 ?5 ?6 02 0 30 10 40 50 output current (ma) p 0 output voltage ( v) v in = 2.0v v in = 3.3v v in = 5.0v downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 7 tcm828/tcm829 note: circuit of figure 5-3 , v in = +5v, c1 = c2 = c3, t a = +25c, unless otherwise noted. figure 2-11: efficiency vs. output current. 100 80 60 40 0 10 20 30 40 50 output current (ma) yp efficiency (%) v in = 5.0v v in = 3.3v v in =1.5v downloaded from: http:///
tcm828/tcm829 ds21488b-page 8 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 9 tcm828/tcm829 3.0 pin description the descriptions of the pins are listed in tab l e 3 - 1 . table 3-1: pin function table tcm828/tcm829 sot-23 symbol function 1 out inverting charge pump output 2v in positive power supply input 3c 1 - commutation capacitor negative terminal 4 gnd ground 5c 1 + commutation capacitor positive terminal downloaded from: http:///
tcm828/tcm829 ds21488b-page 10 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 11 tcm828/tcm829 4.0 detailed description the tcm828/tcm829 charge pump converters invert the voltage applied to the v in pin. conversion consists of a two phase operation ( figure 4-1 ). during the first phase, switches s2 and s4 are open, while s 1 and s3 are closed. during this time, c1 charges to the voltage on v in and load current is supplied from c2. during the second phase, s2 and s4 are closed, and s1 and s3 are open. this action connects c1 across c2, restoring charge to c2. figure 4-1: ideal switched capacitor charge pump. v out = -(v in ) c1 c2 in s1 s3 s4 s2 tcm828/ tcm829 downloaded from: http:///
tcm828/tcm829 ds21488b-page 12 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 13 tcm828/tcm829 5.0 applications information 5.0.1 output voltage considerations the tcm828/tcm829 devices perform voltage conversion, but do not provide regulation. the output voltage will droop in a linear manner with respect to load current. the value of this equivalent output resistance is approximately 25 nominal at +25c and vin = +5v. vout is approximately C 5v at light loads, and droops according to the equation below: v droop =i out r out v out =C(v in Cv droop ) 5.0.2 charge pump efficiency the overall power efficiency of the charge pump is affected by four factors: 1. losses from power consumed by the internal oscillator, switch drive, etc. (which vary with input voltage, temperature and oscillator frequency). 2. i 2 r losses due to the on-resistance of the mosfet switches on-board the charge pump. 3. charge pump capacitor losses due to effective series resistance (esr). 4. losses that occur during charge transfer (from the commutation capacitor to the output capacitor) when a voltage difference between the two capacitors exists. most of the conversion losses are due to factors 2, 3 and 4 above. these losses are shown in equation 5-1 . equation 5-1: the 1/(f osc )(c1) term in equation 5-1 is the effective output resistance of an ideal switched capacitor circuit ( figures 5-1 and 5-2 ). the losses in the circuit due to factor 4 above are also shown in equation 5-2 . the output voltage ripple is shown in equation 5-3 . equation 5-2: equation 5-3: figure 5-1: ideal switched capacitor model. figure 5-2: equivalent output resistance. i out 2 1 f osc () c1 -------------------------- 8 r switch 4esr c1 esr c2 +++ ? p loss234 ,, () i out 2 r out = 2v out v ripple ] ? f osc p loss 4 () 0.5 () c1 () v ( in 2 v out 2 ) 0.5 () c2 () v ripple 2 ? ( ++ [ = v ripple i out f osc () c2 () ---------------------------- 2 i out () esr c2 () + = v + v out r l c1 c2 f v + v out r equiv r l c2 r equiv 1 fc1 -------------- - = downloaded from: http:///
tcm828/tcm829 ds21488b-page 14 ? 2010 microchip technology inc. 5.0.3 capacitor selection in order to maintain the lowest output resistance and output ripple voltage, it is recommended that low esr capacitors be used. additionally, larger values of c1 will lower the output resistance and larger values of c2 will reduce output ripple. (see equation 5-1 ). table 5-1 shows various values of c1 and the corresponding output resistance values @ +25c. it assumes a 0.1 esr c1 and 2 r sw . tab l e 5 - 2 shows the output voltage ripple for various values of c2. the v ripple values assume 10 ma output load current and 0.1 esr c2 . i 5.0.4 input supply bypassing the v in input should be capacitively bypassed to reduce ac impedance and minimize noise effects due to the switching internal to the device. the recommended capacitor depends on the configuration of the tcm828/tcm829 devices. if the device is loaded from out to gnd, it is recommended that a large value capacitor (at least equal to c1) be connected from the input to gnd. if the device is loaded from in to out, a small (0.1 f) capacitor is sufficient. 5.0.5 voltage inverter the most common application for charge pump devices is the inverter ( figure 5-3 ). this application uses two external capacitors C c1 and c2 (plus a power supply bypass capacitor, if necessary). the output is equal to v C in plus any voltage drops, due to loading. refer to ta b l e 5 - 1 and ta b l e 5 - 1 for capacitor selection. figure 5-3: test circuit. 5.0.6 cascading devices two or more tcm828/829 devices can be cascaded to increase output voltage ( tab l e 5 - 4 ). if the output is lightly loaded, it will be close to (C 2 x vin) but will droop at least by r out of the first device multiplied by the iq of the second. it can be seen that the output resistance rises rapidly for multiple cascaded devices. for large negative voltage requirements see the tc682 or tcm680 data sheets. figure 5-4: cascading tcm828 or tcm829 devices to increase output voltage. table 5-1: output resistance vs. c1 (esr = 0.1 ) c1 (f) tcm828 r out ( ) tcm829 r out ( ) 0.1 850 302 1 100 45 3.3 42 25 10 25 19 47 18 17 100 17 17 table 5-2: output voltage ripple vs. c2 (esr = 0.1 ) iout 10ma c2 (f) tcm828 v ripple (mv) tcm829 r out ( ) 1 835 286 3.3 254 88 10 85 31 47 20 8 100 10 5 3 2 4 5 1 c3 3.3 f* c1 3.3 f* c2 3.3 f* v out v out r l c1 - in out c1 + gnd voltage inverter tcm828/ tcm829 *10 f ( tcm828 ) c1 c1 c2 5 5 4 3 4 1 2 2 1 3 c2 v + in v out v out =-nv in "1" "n" . . . . . . tcm828/ tcm829 tcm828/ tcm829 downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 15 tcm828/tcm829 5.0.7 paralleling devices to reduce the value of r out , multiple tcm828/ tcm829 devices can be connected in parallel ( figure 5-5 ). the output resistance will be reduced by a factor of n, where n is the number of tcm828/ tcm829 device. each device will require its own pump capacitor (c1), but all devices may share one reservoir capacitor (c2). however, to preserve ripple performance, the value of c2 should be scaled according to the number of paralleled tcm828/ tcm829 devices. figure 5-5: paralleling tcm828 or tcm829 devices to reduce output resistance. 5.0.8 voltage doubler/inverter another common application of the tcm828/tcm829 devices is shown in figure 5-6 . this circuit performs two functions in combination. c1 and c2 form the standard inverter circuit described above. c3 and c4, plus the two diodes, form the voltage doubler circuit. c1 and c3 are the pump capacitors, while c2 and c4 are the reservoir capacitors. because both sub-circuits rely on the same switches, if either output is loaded, both will drop toward gnd. make sure that the total current drawn from both the outputs does not total more than 40 ma. figure 5-6: combined doubler and inverter. 5.0.9 diode protection for heavy loads when heavy loads require the out pin to sink large currents, being delivered by a positive source, diode protection may be needed. the out pin should not be allowed to be pulled above ground. this is accomplished by connecting a schottky diode (1n5817) as shown in figure 5-7 . figure 5-7: high v ? load current. 5.0.10 layout considerations as with any switching power supply circuit, good layout practice is recommended. mount components as close together as possible, to minimize stray inductance and capacitance. also use a large ground plane to minimize noise leakage into other circuitry. c1 c1 5 5 4 3 4 1 2 2 1 3 c2 v + in v out v out =v - in "1" "n" . . . . . . tcm828/ tcm829 tcm828/ tcm829 r out = v out of single device number of devices c1 d1 d2 d1, d2 = 1n4148 5 4 1 2 3 c2 c4 c3 v + in v out =v - in v out =(2v in )- tcm828/ tcm829 (v fd1 )-(v fd2 ) gnd out 4 1 tcm828/ tcm829 downloaded from: http:///
tcm828/tcm829 ds21488b-page 16 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 17 tcm828/tcm829 6.0 packaging information 6.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead sot-23 example: xxnn ca25 device code tcm828ect728 cann tcm828vt713 cwnn TCM829ECT713-GVAO cbnn downloaded from: http:///
tcm828/tcm829 ds21488b-page 18 ? 2010 microchip technology inc. figure 6-1: component taping orientation for 5-pin sot-23 (eiaj sc-74a) devices. user direction of feed user direction of feed device marking device marking pin 1 pin 1 standard reel component orientationtr suffix device (mark right side up) reverse reel component orientationrt suffix device (mark upside down) w p package carrier width (w) pitch (p) part per full reel reel size 5-pin sot-23 8 mm 4 mm 3000 7 in carrier tape, number of components per reel and reel size downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 19 tcm828/tcm829

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tcm828/tcm829 ds21488b-page 20 ? 2010 microchip technology inc. 5-lead plastic small outline transistor (ct) [sot-23] note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 21 tcm828/tcm829 appendix a: revision history revision b (august 2010) the following is the list of modifications: 1. added new operating temperature for tcm828 (tcm828vt). 2. reformatted the original document. 3. updated package drawings. revision a (march 2001) original release of this document. downloaded from: http:///
tcm828/tcm829 ds21488b-page 22 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 23 tcm828/tcm829 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. x /xx package temperature range device device: tcm828: cmos voltage converter. tcm829: cmos voltage converter. temperature range: e = -40c to +85c v = -40c to +125c package: ct = 5-lead plastic small outline transistor, sot-23. examples: a) tcm828ect728: extended temp., 5-ld sot-23 package. b) tcm828vt713: various temperature 5-ld sot-23 package. c) TCM829ECT713-GVAO: extended temp., 5-ld sot-23 package. downloaded from: http:///
tcm828/tcm829 ds21488b-page 24 ? 2010 microchip technology inc. notes: downloaded from: http:///
? 2010 microchip technology inc. ds21488b-page 25 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, appl ication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, octopus, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, total endurance, tsharc, uniwindriver, wiperlock and zena are trademarks of microchip tec hnology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2010, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-60932-445-2 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. downloaded from: http:///
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