2004. 10. 6 1/2 semiconductor technical data kdv365f revision no : 0 vco for uhf/vhf band. features h good c-v linearity. h low series resistance. h small package : tfsc. maximum rating (ta=25 ? ) tfsc dim millimeters a b c d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05 0.40 max cathode mark c d b 1 2 a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode type name marking k characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =10v --10 na i r2 v r =10v, ta=60 ? - - 100 capacitance c 1v v r =1v, f=1mhz 27.05 - 28.55 pf c 4v v r =4v, f=1mhz 6.05 - 7.55 capacitance ratio c 1v /c 4v - 3.0 - - - series resistance r s v r =4v, f=100mhz - - 1.5 ? esd capability * c=200pf, r=0 ? , both forward and reverse direction 1 pulse. 200 - - 7 * failure criterion : i r ? 20na at v r =10v.
2004. 10. 6 2/2 revision no : 0 kdv365f reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 412 816 total capacitance c (pf) 0 10 1 reverse voltage v (v) r tr c - v 30 5 10 15 20 25 f=1mhz 30 10 -13 10 -12
|
