? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt a92 ( ? MMBTA92) gm bt a93 ( ? mmbta93) features features features features c pnp high voltage transistor maximum maximum maximum maximum ratings ratings ratings ratings ~? characteristic ? symbol ? gm bt a 9 2 gm bt a 9 3 unit collector-emitter voltage ?O - O? v ceo - 300 - 200 vdc collector-base voltage ?O - O? v cbo - 300 - 200 vdc emitter-base voltage lOO? v ebo - 6.0 - 6.0 vdc collector current - continuous O - Bm ic - 500 - 500 madc thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 ?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2) t a = 25 ?? 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150 device device device device marking marking marking marking gm gm gm gm bt bt bt bt a92 a92 a92 a92 ( ? MMBTA92) =2d;gm =2d;gm =2d;gm =2d;gm bt bt bt bt a93 a93 a93 a93 ( ? mmbta93) =2e =2e =2e =2e
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt a92 ( ? MMBTA92) gm bt a93 ( ? mmbta93) electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) characteristic ? symbol ? min ? max ? unit collector-emitter breakdown voltage(3) ?O - lO? (ic=-1.0madc,i b =0) v (br)ceo gm bt a92 gm bt a93 -300 -200 vdc collector-base breakdown voltage ?O - O? (ic=-100 adc,i e =0) v (br)cbo gm bt a92 gm bt a93 -300 -200 __ vdc emitter-base breakdown voltage lO - O? (i e =-10 adc,ic=0) v (br)ebo -5.0 vdc emitter cutoff current l? (v eb =-3.0vdc,i c =0) i ebo __ -100 nadc collector cutoff current ?O? (v cb =-200vdc,i e =0) (v cb =-160vdc,i e =0) i cbo gm bt a92 gm bt a93 __ -250 -250 nadc dc current gain ? h fe (i c =-1.0madc,v ce =-10.0vdc) 25 (i c =-10madc,v ce =-10.0vdc) 40 300 (i c =-30madc,v ce =-10.0vdc) gm bt a92 gm bt a93 25 25 __ collector-emitter saturation voltage ?O - lO?? (i c =-20madc, i b =-2.0madc) v ce(sat) gm bt a92 gm bt a93 -0.5 -0.5 vdc base-emitter saturation voltage O - lO?? (i c =-20madc, i b =-2.0madc) v be(sat) -0.9 vdc current-gain-bandwidth product - ?e (i c =-10madc,v ce =-20vdc,f=100mhz) f t 50 __ mhz collector-base capacitance ? (v cb =-20.0vdc, i e =0, f=1.0mhz) c cb gm bt a92 gm bt a93 __ 6.0 8.0 pf fr-5=1.0 0.75 0.062in. a lumina=0.4 0.3 0.024in.99.5%alumina. p u lse width < 300 u s;duty cycle < 2.0%.
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt a92 ( ? MMBTA92) gm bt a93 ( ? mmbta93) dimension dimension dimension dimension b? (unit) mm
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