VS-HFA08TA60CPBF, vs-hfa08ta60c-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 94043 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? , ultrafast soft recovery diode, 2 x 4 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? designed and qualified according to jedec ? -jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa08ta60c... is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basi c ratings of 600 v and 4 a per leg continuous current, the vs-hfa08ta60c... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred vs-hfa08ta60c... is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-220ab i f(av) 2 x 4 a v r 600 v v f at i f 1.4 v t rr typ. 17 ns t j max. 150 c diode variation common cathode to-220ab ba s e common cathode anode anode common cathode 1 3 2 2 available absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 4 a per device 8 single pulse forward current i fsm 25 maximum repetitive forward current i frm 16 maximum power dissipation p d t c = 25 c 25 w t c = 100 c 10 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA08TA60CPBF, vs-hfa08ta60c-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 94043 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 4.0 a see fig. 1 -1.51.8 i f = 8.0 a - 1.8 2.2 i f = 4.0 a, t j = 125 c - 1.4 1.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 - 0.17 3.0 a t j = 125 c, v r = 0.8 x v r rated - 44 300 junction capacitance c t v r = 200 v see fig. 3 - 4.0 8.0 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time see fig. 5, 6 and 16 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 17 - ns t rr1 t j = 25 c i f = 4.0 a di f /dt = 200 a/s v r = 200 v -2842 t rr2 t j = 125 c - 38 57 peak recovery current see fig. 7 and 8 i rrm1 t j = 25 c - 2.9 5.2 a i rrm2 t j = 125 c - 3.7 6.7 reverse recovery charge see fig. 9 and 10 q rr1 t j = 25 c - 40 60 nc q rr2 t j = 125 c - 70 105 peak rate of fa ll of recovery current during t b see fig. 11 and 12 di (rec)m /dt1 t j = 25 c - 280 - a/s di (rec)m /dt2 t j = 125 c - 235 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --5.0 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ab hfa08ta60c
VS-HFA08TA60CPBF, vs-hfa08ta60c-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 94043 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 0 6 2 3 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 14 0.1 5 0.01 0.1 1 10 100 0 100 v r - reverse voltage (v) i r - reverse current (a) t j = 125 c t j = 25 c 1000 200 500 400 300 0.001 t j = 150 c 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-HFA08TA60CPBF, vs-hfa08ta60c-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 94043 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 9 - reverse recovery waveform and definitions 50 40 20 100 1000 di f /dt (a/s) t rr (ns) 25 v r = 200 v t j = 125 c t j = 25 c 45 35 30 i f = 8 a i f = 4 a 14 12 0 100 1000 di f /dt (a/s) i rr (a) 8 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 4 10 6 2 200 160 100 1000 di f /dt (a/s) q rr (nc) i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 80 40 120 0 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA08TA60CPBF, vs-hfa08ta60c-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 94043 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA08TA60CPBF 50 1000 antistatic plastic tube vs-hfa08ta60c-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220abpbf www.vishay.com/doc?95225 to-220ab-n3 www.vishay.com/doc?95028 2 - hexfred ? family 4 - current rating (08 = 8 a) 4 5 - package: 4 ta = to-220ab 3 - electron irradiated 6 7 - voltage rating (60 = 600 v) 1 - vishay semiconductors product - circuit configuration: c = common cathode 7 device code 5 1 3 2 4 6 7 8 vs- hf a 08 ta 60 c pbf - environmental digit: pbf = lead (pb)-free and rohs-compliant -n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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