unisonic technologies co., ltd 4n90 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-479.f 4 a mps, 900 volts n-channel power mosfet ? description the utc 4n90 is a n-channel enhancement mosfet adopting utc?s advanced technology to provide customers with dmos, planar stripe technology. this technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. it also can withstand high energy pulse in the avalanche and communication mode. the utc 4n90 is particularly applied in high efficiency switch mode power supplies. ? features * r ds(on) < 4.2 ? @ v gs =10v * high switching speed * 100% avalanche tested * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4n90l-ta3-t 4n90g-ta3-t to-220 g d s tube 4n90l-tf3-t 4n90g-tf3-t to-220f g d s tube 4n90l-tf1-t 4n90g-tf1-t to-220f1 g d s tube 4n90l-tf2-t 4n90g-tf2-t to-220f2 g d s tube 4n90l-tf3t-t 4n90g-tf3t-t to-220f3 g d s tube 4n90l-tm3-t 4n90g-tm3-t to-251 g d s tube 4n90l-tn3-r 4n90g-tn3-r to-252 g d s tape reel 4n90l-t3n-t 4N90G-T3N-T to-3pn g d s tube note: pin assignment: g: gate d: drain s: source
4n90 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-479.f ? marking
4n90 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-479.f ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 900 v gate to source voltage v gss 30 v avalanche current (note 2) i ar 4 a continuous drain current continuous i d 4 a pulsed (note 2) i dm 16 a avalanche energy single pulsed (note 3) e as 570 mj repetitive (note 2) e ar 14 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation (t c =25c) to-220 p d 140 w to-220f/to-220f1 to-220f3 38 to-220f2 40 to-251/to-252 54 to-3pn 208 derate above 25c to-220 1.12 w/c to-220f/to-220f1 to-220f3 0.304 to-220f2 0.322 to-251/to-252 0.43 to-3pn 1.66 operating junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l=67mh, i as =4a, v dd =50v, r g =25 ? , starting t j =25c 4. i sd 4a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-220/to-220f to-220f1/to-220f2 to-220f3 ja 62.5 c/w to-251/to-252 110 to-3pn 40 junction to case to-220 jc 0.89 c/w to-220f/to-22f1 to-22f3 3.25 to-220f2 3.1 to-251/to-252 2.3 to-3pn 0.6
4n90 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-479.f ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25c 1.05 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 a gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =2a 2.1 4.2 ? dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1000 1400 pf output capacitance c oss 49 85 pf reverse transfer capacitance c rss 13 18 pf switching parameters total gate charge q g v ds =50v, v gs =10v, i d =1.3a (note 1,2) 33 50 nc gate-source charge q gs 8.9 nc gate-drain charge q gd 10 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? (note 1,2) 70 100 ns turn-on rise time t r 188 220 ns turn-off delay time t d ( off ) 188 220 ns turn-off fall time t f 88 120 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4 a maximum body-diode pulsed current i sm 16 a drain-source diode forward voltage v sd i s =4a, v gs =0v 1.4 v notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4n90 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-479.f ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
4n90 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-479.f ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
4n90 power mosfet unisonic technologies co., ltd 7 of 6 www.unisonic.com.tw qw-r502-479.f ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 1 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 23 5 4 0 50 100 150 200 250 300 0 200 800 1000 1200 400 0 50 100 150 200 250 300 600 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 2.5 01 23 4 0.5 1 1.5 2 6 0 body-diode continuous current vs. source to drain voltage source to drain voltage, v sd (v) body-diode continuous current, i s (a) 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 v gs =10v, i d =2a 5 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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