cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 1/ 8 MTB30N06J3 cystek product specification n-channel enhancement mode power mosfet MTB30N06J3 bv dss 60v i d 22a r ds(on) @v gs =10v, i d =18a 27m (typ) r ds(on) @v gs =4.5v, i d =10a 31m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline to-252(dpak) ordering information device package shipping MTB30N06J3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel MTB30N06J3 g gate g d s d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 2/ 8 MTB30N06J3 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 60 gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v 22 continuous drain current @ t c =100c, v gs =10v i d 14 pulsed drain current (note 1) i dm 50 avalanche current i as 22 a avalanche energy @ l=0.1mh, i d =22a, r g =25 e as 24.2 repetitive avalanche energy@ l=0.05mh (note 2) e ar 3 mj total power dissipation @ t c =25 30 total power dissipation @ t c =100 pd 12 w operating junction and storage temp erature range tj, tstg -55~+150 c note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 4.16 thermal resistance, junction-to-ambient, max r th,j-a 50 (note 1) thermal resistance, junction-to-ambient, max r th,j-a 110 (note 2) c/w note : 1.when mounted on pcb of 1 in 2 pad area, t 10s. 2. when mounted on the minimum pad size recommended (pcb mount), t 10s. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v gs =0v, i d =250 a v gs(th) 1 1.8 2.5 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =60v, v gs =0v i dss - - 25 a v ds =48v, v gs =0v, tj=125 c - 27 36 v gs =10v, i d =18a *r ds(on) - 31 45 m v gs =4.5v, i d =10a *g fs - 10 - s v ds =10v, i d =18a dynamic *qg - 9 - *qgs - 1.7 - *qgd - 2.5 - nc v ds =30v, i d =22a, v gs =10v *t d(on) - 4 - *tr - 7 - *t d(off) - 11 - *t f - 4 - ns v ds =30v, i d =1a, v gs =10v, r gs =6
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 3/ 8 MTB30N06J3 cystek product specification ciss - 1572 - coss - 58 - crss - 39 - pf v ds =30v,v gs =0v, f=1mhz source-drain diode *i s - - 22 *i sm - - 50 a *v sd - 0.87 1.2 v i f =18a, v gs =0v *trr - 28 - ns *qrr - 34 - nc i f =18a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 4/ 8 MTB30N06J3 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 45 50 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v 10v,9v,8v,7v,6v,5v v ds , drain-source voltage(v) i d , drain current (a) v gs =4v v gs =3v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =4.5v v gs =3v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =18a r ds( on) @tj=25c : 27 m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =18a
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 5/ 8 MTB30N06J3 cystek product specification typical characteristics(cont.) threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , threshold voltage(v) i d =250 a capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10 gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =22a v ds =48v v ds =30v v ds =12v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=150c v gs =10v, jc =4.16c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs case temperature 0 5 10 15 20 25 30 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =4.16c/w
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 6/ 8 MTB30N06J3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 024681012 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =4.16c/w
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 7/ 8 MTB30N06J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 8/ 8 MTB30N06J3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow pb-free assembly profile feature sn-pb eutectic assembly average ramp-up rate 3 c/second max. 3 c/second max. (tsmax to tp) preheat 100 c 150 c ? temperature min(t s min) ? temperature max(t s max) 150 c 200 c ? time(ts min to ts max ) 60-120 seconds 60-180 seconds time maintained above: ? temperature (t l ) 183 c 217 c ? time (t l ) 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c699j3 issued date : 2012.05.16 revised date : 2013.12.26 page no. : 9/ 8 MTB30N06J3 cystek product specification to-252 dimension marking: style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-252 plastic surface mount package cystek package code: j3 device name date code b30 n06 1 2 3 4 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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