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001PD2A5 71BCP U3N60 BR2035 A501RW NTE20 2815S 2SC23
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00.511.522.5 0.1 1 10 100 SF30JC6 tc=150c [max] tc=150c [typ] tc= 25c [max] tc= 25c [typ] 0.2 0.5 2 5 20 50 forward voltage pulse measurement per diode forward voltage i f [a] forward current v f [v]
0 1020304050607080 0.0001 0.001 0.01 0.1 1 10 100 SF30JC6 tc=125c [typ] tc=100c [typ] tc=75c [typ] tc=50c [typ] tc=25c [typ] tc=150c [typ] reverse current pulse measurement per diode reverse voltage v r [v] i r [ma] reverse current
0 1 2 3 4 5 6 7 8 0 10203040506070 dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 SF30JC6 reverse power dissipation v r [v] reverse voltage reverse power dissipation p r [w] tj = 150c 0 t p v r t d=t p /t
0 5 10 15 20 25 30 35 0 1020304050 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF30JC6 forward power dissipation p f [w] i o [a] average rectified forward current forward power dissipation tj = 150c 0 t p i o t d=t p /t
0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF30JC6 derating curve tc [c] case temperature i o [a] average rectified forward current v r =30v io 0 0 v r tp t d=tp/t
0 50 100 150 200 250 300 350 400 1 10 100 2 5 20 50 SF30JC6 peak surge forward capability i fsm 10ms 10ms 1 cycle number of cycles [cycle] i fsm [a] peak surge forward current non-repetitive, sine wave, tj=25c before surge current is applied
10 100 1000 0.1 1 10 SF30JC6 5000 2000 500 200 50 20 0.2 0.5 2 5 20 60 f=1mhz tc=25c typ per diode junction capacitance c j [pf] reverse voltage v r [v] junction capacitance


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