? semiconductor components industries, llc, 2012 august, 2012 ? rev. 10 1 publication order number: amis ? 30660/d amis-30660 high speed can transceiver description the amis ? 30660 can transceiver is the interface between a controller area network (can) protocol controller and the physical bus and may be used in both 12 v and 24 v systems. the transceiver provides differential transmit capability to the bus and differential receive capability to the can controller. due to the wide common ? mode voltage range of the receiver inputs, the amis ? 30660 is able to reach outstanding levels of electromagnetic susceptibility (ems). similarly, extremely low electromagnetic emission (eme) is achieved by the excellent matching of the output signals. features ? fully compatible with the iso 11898 ? 2 standard ? certified ?authentication on can transceiver conformance (d1.1)? ? high speed (up to 1 mbit/s) ? ideally suited for 12 v and 24 v industrial and automotive applications ? low eme common ? mode choke is no longer required ? differential receiver with wide common ? mode range ( 35 v) for high ems ? no disturbance of the bus lines with an unpowered node ? transmit data (txd) dominant time ? out function ? thermal protection ? bus pins protected against transients in an automotive environment ? silent mode in which the transmitter is disabled ? short circuit proof to supply voltage and ground ? logic level inputs compatible with 3.3 v devices ? these are pb ? free devices* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com pin assignment (top view) 5 6 7 8 1 2 3 4 txd rxd s gnd canl canh amis ? 30660 pc20040918.3 see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information v cc v ref 1 8 30660 ? 2 alyw 1 8 30660 ? 2 = specific device code a = assembly location l = wafer lot y = year w = work week = pb ? free package marking diagram soic ? 8 case 751
amis ? 30660 http://onsemi.com 2 table 1. technical characteristics symbol parameter conditions min max unit v canh dc voltage at pin canh 0 < v cc < 5.25 v; no time limit ? 45 +45 v v canl dc voltage at pin canl 0 < v cc < 5.25 v; no time limit ? 45 +45 v v o(dif)(bus_dom) differential bus output voltage in dominant state 42.5 < r lt < 60 1.5 3 v t pd(rec ? dom) propagation delay txd to rxd see figure 6 70 245 ns t pd(dom ? rec) propagation delay txd to rxd see figure 6 100 245 ns c m ? range input common ? mode range for comparator guaranteed differential receiver threshold and leakage current ? 35 +35 v v cm ? peak common ? mode peak see figures 7 and 8 (note 1) ? 500 500 mv v cm ? step common ? mode step see figures 7 and 8 (note 1) ? 150 150 mv 1. the parameters v cm ? peak and v cm ? step guarantee low electromagnetic emission. canh canl amis ? 30660 gnd rxd v cc 2 7 6 5 timer s 1 driver control thermal shutdown v cc 8 4 pd20070607.1 txd 3 v ref comp v cc / 2 + figure 1. block diagram ri (cm) ri (cm) table 2. pin list and descriptions pin name description 1 txd transmit data input; low input dominant driver; internal pull ? up current 2 gnd ground 3 v cc supply voltage 4 rxd receive data output; dominant transmitter low output 5 v ref reference voltage output 6 canl low ? level can bus line (low in dominant mode) 7 canh high ? level can bus line (high in dominant mode) 8 s silent mode control input; internal pull ? down current
amis ? 30660 http://onsemi.com 3 table 3. absolute maximum ratings symbol parameter conditions min max unit v cc supply voltage ? 0.3 +7 v v canh dc voltage at pin canh 0 < v cc < 5.25 v; no time limit ? 45 +45 v v canl dc voltage at pin canl 0 < v cc < 5.25 v; no time limit ? 45 +45 v v txd dc voltage at pin txd ? 0.3 v cc + 0.3 v v rxd dc voltage at pin rxd ? 0.3 v cc + 0.3 v v s dc voltage at pin s ? 0.3 v cc + 0.3 v v ref dc voltage at pin v ref ? 0.3 v cc + 0.3 v v tran(canh) transient voltage at pin canh (note 2) ? 150 +150 v v tran(canl) transient voltage at pin canl (note 2) ? 150 +150 v v esd electrostatic discharge voltage at all pins (note 3) (note 5) ? 4 ? 500 +4 +500 kv v latchup static latchup at all pins (note 4) 100 ma t stg storage temperature ? 55 +155 c t amb ambient temperature ? 40 +125 c t junc maximum tunction temperature ? 40 +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 2. applied transient waveforms in accordance with iso 7637 part 3, test pulses 1, 2, 3a, and 3b (see figure 4). 3. standardized human body model esd pulses in accordance to mil883 method 3015.7. 4. static latch ? up immunity: static latch ? up protection level when tested according to eia/jesd78. 5. standardized charged device model esd pulses when tested according to eos/esd ds5.3 ? 1993. table 4. thermal characteristics symbol parameter conditions value unit r th(vj ? a) thermal resistance from junction ? to ? ambient in soic ? 8 package in free air 150 k/w r th(vj ? s ) thermal resistance from junction ? to ? substrate of bare die in free air 45 k/w amis ? 30660 canh canl gnd rxd txd vref 2 1 3 45 6 7 8 pc20040918.2 v cc s can controller vbat 5v ? reg in out 47 nf 60 60 can bus 47 nf 60 60 v cc gnd figure 2. application diagram
amis ? 30660 http://onsemi.com 4 functional description operating modes the behavior of amis ? 30660 under various conditions is illustrated in table 5 below. in case the device is powered, one of two operating modes can be selected through pin s. table 5. functional table of amis ? 30660 (x = don?t care) vcc pin txd pin s pin canh pin canl bus state pin rxd 4.75 v to 5.25 v 0 0 (or floating) high low dominant 0 4.75 v to 5.25 v x 1 v cc / 2 v cc / 2 recessive 1 4.75 v to 5.25 v 1 (or floating) x v cc / 2 v cc / 2 recessive 1 v cc < porl (unpowered) x x 0 v < canh < v cc 0 v < canl < v cc recessive 1 porl < v cc < 4.75 v > 2 v x 0 v < canh < v cc 0 v < canl < v cc recessive 1 high ? speed mode if pin s is pulled low (or left floating), the transceiver is in its high ? speed mode and is able to communicate via the bus lines. the signals are transmitted and received to the can controller via the pins txd and rxd. the slopes on the bus line outputs are optimized to give extremely low electromagnetic emissions. silent mode in silent mode, the transmitter is disabled. all other ic functions continue to operate. the silent mode is selected by connecting pin s to v cc and can be used to prevent network communication from being blocked, due to a can controller which is out of control. overtemperature detection a thermal protection circuit protects the ic from damage by switching off the transmitter if the junction temperature exceeds a value of approximately 160 c. because the transmitter dissipates most of the power, the power dissipation and temperature of the ic is reduced. all other ic functions continue to operate. the transmitter off ? state resets when pin txd goes high. the thermal protection circuit is particularly necessary when a bus line short ? circuits. txd dominant time ? out function a txd dominant time ? out timer circuit prevents the bus lines from being driven to a permanent dominant state (blocking all network communication) if pin txd is forced permanently low by a hardware and/or software application failure. the timer is triggered by a negative edge on pin txd. if the duration of the low ? level on pin txd exceeds the internal timer value t dom , the transmitter is disabled, driving the bus into a recessive state. the timer is reset by a positive edge on pin txd. fail ? safe features a current ? limiting circuit protects the transmitter output stage from damage caused by an accidental short ? circuit to either positive or negative supply voltage, although power dissipation increases during this fault condition. the pins canh and canl are protected from automotive electrical transients (according to ?iso 7637?; see figure 3). pin txd is pulled high internally should the input become disconnected.
amis ? 30660 http://onsemi.com 5 electrical characteristics definitions all voltages are referenced to gnd (pin 2). positive currents flow into the ic. sinking current means the current is flowing into the pin; sourcing current means the current is flowing out of the pin. table 6. dc and timing characteristics (v cc = 4.75 v to 5.25 v; t junc = ? 40 c to +150 c; r lt = 60 unless specified otherwise.) symbol parameter conditions min typ max unit supply (pin v cc ) i cc supply current dominant; v txd = 0 v recessive; v txd = v cc 25 2 45 4 65 8 ma i ccs supply current in silent mode v s = v cc 2 4 8 ma transmitter data input (pin txd) v ih high ? level input voltage output recessive 2.0 ? v cc +0.3 v v il low ? level input voltage output dominant ? 0.3 ? +0.8 v i ih high ? level input current v txd = v cc ? 1 0 +1 a i il low ? level input current v txd = 0 v ? 75 ? 200 ? 350 a c i input capacitance not tested ? 5 10 pf mode select (pin s) v ih high ? level input voltage silent mode 2.0 ? v cc +0.3 v v il low ? level input voltage high ? speed mode ? 0.3 ? +0.8 v i ih high ? level input current v s = 2 v 20 30 50 a i il low ? level input current v s = 0.8 v 15 30 45 a receiver data output (pin rxd) v oh high ? level output voltage i rxd = ? 10 ma 0.6 x v cc 0.75 x v cc v v ol low ? level output voltage i rxd = 6 ma 0.25 0.45 v reference voltage output (pin v ref ) v ref reference output voltage ? 50 a < i vref < +50 a 0.45 x v cc 0.50 x v cc 0.55 x v cc v v ref_cm reference output voltage for full common mode range ? 35 v amis ? 30660 http://onsemi.com 6 table 6. dc and timing characteristics (v cc = 4.75 v to 5.25 v; t junc = ? 40 c to +150 c; r lt = 60 unless specified otherwise.) symbol unit max typ min conditions parameter bus lines (pins canh and canl) v i(dif)(th) differential receiver threshold voltage ? 5 v < v canl < +10 v; ? 5 v < v canh < +10 v; see figure 4 0.5 0.7 0.9 v v ihcm(dif) (th) differential receiver threshold voltage for high common ? mode ? 35 v < v canl < +35 v; ? 35 v < v canh < +35v; see figure 4 0.25 0.7 1.05 v v i(dif) (hys) differential receiver input voltage hyster- esis ? 5 v < v canl < +10 v; ? 5 v < v canh < +10 v; see figure 4 50 70 100 mv r i(cm)(canh) common ? mode input resistance at pin canh 15 25 37 k r i(cm) (canl) common ? mode input resistance at pin canl 15 25 37 k r i(cm)(m) matching between pin canh and pin canl common ? mode input resistance v canh = v canl ? 3 0 +3 % r i(dif) differential input resistance 25 50 75 k c i(canh) input capacitance at pin canh v txd = v cc ; not tested 7.5 20 pf c i(canl) input capacitance at pin canl v txd = v cc ; not tested 7.5 20 pf c i(dif) differential input capacitance v txd = v cc ; not tested 3.75 10 pf i li(canh) input leakage current at pin canh v cc = 0 v; v canh = 5v 10 170 250 a i li(canl) input leakage current at pin canl v cc = 0 v; v canl = 5v 10 170 250 a v cm ? peak common ? mode peak during transition from dom rec or rec dom see figures 7 and 8 ? 500 500 mv v cm ? step difference in common ? mode between dominant and recessive state see figures 7 and 8 ? 150 150 mv power ? on ? reset (por) porl por level canh, canl, v ref in tri ? state below por level 2.2 3.5 4.5 v thermal shutdown t j(sd) shutdown junction temperature 150 160 180 c timing characteristics (see figures 5 and 6) t d(txd ? buson) delay txd to bus active v s = 0 v 40 85 130 ns t d(txd ? busoff) delay txd to bus inactive v s = 0 v 30 60 105 ns t d(buson ? rxd) delay bus active to rxd v s = 0 v 25 55 105 ns t d(busoff ? rxd) delay bus inactive to rxd v s = 0 v 65 100 135 ns t pd(rec ? dom) propagation delay txd to rxd from recessive to dominant v s = 0 v 70 245 ns t d(dom ? rec) propagation delay txd to rxd from dominant to recessive v s = 0 v 100 245 ns t dom(txd) txd dominant time for time out v txd = 0 v 250 450 750 s
amis ? 30660 http://onsemi.com 7 measurement seups and definitions amis ? 30660 v cc gnd 2 3 canh canl v ref 5 6 7 pc20040918.4 s 8 rxd 4 txd 1 1 nf 100 nf +5 v 20 pf 1 nf transient generator figure 3. test circuit for automotive transients v rxd v i(dif)(hys) high low 0,5 0,9 pc20040829.7 hysteresis figure 4. hysteresis of the receiver amis ? 30660 v cc gnd 2 3 canh canl v ref 5 6 7 r lt c lt pc20040018.5 s 8 rxd 4 txd 1 60 100 pf 100 nf +5 v 20 pf figure 5. test circuit for timing characteristics
amis ? 30660 http://onsemi.com 8 canh canl txd rxd dominant 0,9v 0,5v recessive t d(txd ? buson) t d(buson ? rxd) t pd(rec ? dom) t d(txd ? busoff) t d(busoff ? rxd) t pd(dom ? rec) pc20040829.6 0,3 x v cc high low figure 6. timing diagram for ac characteristics 0.7 x v cc v i(dif) = v canh ? v canl 10 nf amis ? 30660 v cc gnd 2 3 canh canl v ref 5 6 7 pc20040918.6 s 8 rxd 4 txd 1 30 active probe 100 nf +5 v 20 pf generator 30 6.2 k 47 nf 6.2 k spectrum anayzer figure 7. basic test set ? up for electromagnetic measurement canh canl recessive v cm ? peak pc20040829.7 v cm ? peak v cm ? step figure 8. common ? mode voltage peaks (see measurement setup) v cm = 0.5*(v canh + v canl )
amis ? 30660 http://onsemi.com 9 device ordering information part number description temperature range package type shipping ? amis30660canh2g hs can transc. (5 v) (matte sn) ? 40 c ? 125 c soic ? 8 (pb ? free) 96 tube / tray amis30660canh2rg hs can transc. (5 v) (matte sn) ? 40 c ? 125 c soic ? 8 (pb ? free) 3000 / tape & reel amis30660canh6g hs can transc. (5 v) (nipdau) ? 40 c ? 125 c soic ? 8 (pb ? free) 96 tube / tray amis30660canh6rg hs can transc. (5 v) (nipdau) ? 40 c ? 125 c soic ? 8 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
amis ? 30660 http://onsemi.com 10 package dimensions soic ? 8 case 751 ? 07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751 ? 01 thru 751 ? 06 are obsolete. new standard is 751 ? 07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ? x ? ? y ? g m y m 0.25 (0.010) ? z ? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 amis ? 30660/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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