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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.1 www.infineon.com 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation highspeedswitchingseriesthirdgenerationigbtcopackedwithrapid1 fastandsoftantiparalleldiodeinfullyisolatedpackage features: trenchstop?technologyoffers: ?shortcircuitwithstandtime5satt vj =175c ?positivetemperaturecoefficientinv ce(sat) ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?2500v rms electricalisolation,50/60hz,t=1min ?100%testedisolatedmountingsurface ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt potentialapplications: ?airconditioningpfc ?generalpurposedrives(gpd) ?servodrives productvalidation: qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/20/22 keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKFW60N60DH3E 600v 50a 2.2v 175c k60ddh3e pg-to247-3-ai g c e fully isolated package to-247
datasheet 2 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e fully isolated package to-247
datasheet 3 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t h =25c t h =65c t h =65c i c 53.0 44.0 74.0 1) a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 150.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 150.0 a diodeforwardcurrent,limitedby t vjmax t h =25cvaluelimitedbybondwire t h =65c i f 40.0 32.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 150.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s, d <0.010) v ge 20 30 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t h =25c powerdissipation t h =65c p tot 141.0 104.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm isolationvoltagerms, f =50/60hz, t =1min 2) v isol 2500 v thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, 3) junction - heatsink r th(j-h) - 0.90 1.06 k/w diode thermal resistance, 3) junction - heatsink r th(j-h) - 1.75 1.96 k/w thermal resistance junction - ambient r th(j-a) - - 65 k/w 1) equivalent current rating in to-247-3 at t h = 65c using reference insulation material: 152m, 0.9 w/mk, standard polyimide based reinforced carrier insulator 2) for a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 3) at force on body f = 500n, t a = 25oc g c e fully isolated package to-247
datasheet 4 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =175c - - 2.20 2.80 2.70 - v diode forward voltage v f v ge =0v, i f =25.0a t vj =25c t vj =175c - - 1.50 1.45 1.90 - v gate-emitter threshold voltage v ge(th) i c =0.58ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - 600 40 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 19.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2301 - output capacitance c oes - 98 - reverse transfer capacitance c res - 67 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =50.0a, v ge =15v - 210.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 245 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 23 - ns rise time t r - 39 - ns turn-off delay time t d(off) - 170 - ns fall time t f - 19 - ns turn-on energy e on - 1.57 - mj turn-off energy e off - 0.72 - mj total switching energy e ts - 2.29 - mj t vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 w , r g(off) =7.0 w , l s =75nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e fully isolated package to-247
datasheet 5 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation diode reverse recovery time t rr - 68 - ns diode reverse recovery charge q rr - 0.55 - c diode peak reverse recovery current i rrm - 12.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -834 - a/s t vj =25c, v r =400v, i f =25.0a, di f /dt =1000a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 23 - ns rise time t r - 37 - ns turn-off delay time t d(off) - 198 - ns fall time t f - 21 - ns turn-on energy e on - 2.18 - mj turn-off energy e off - 0.95 - mj total switching energy e ts - 3.13 - mj t vj =175c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 w , r g(off) =7.0 w , l s =75nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time t rr - 104 - ns diode reverse recovery charge q rr - 1.43 - c diode peak reverse recovery current i rrm - 19.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -637 - a/s t vj =175c, v r =400v, i f =25.0a, di f /dt =1000a/s g c e fully isolated package to-247
datasheet 6 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 1. forwardbiassafeoperatingarea ( d =0, t h =25c, t j 175c, v ge =15v, t p 1s) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofheatsink temperature ( t j 175c) t h ,heatsinktemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 figure 3. collectorcurrentasafunctionofheatsink temperature ( v ge 3 15v, t j 175c,insulatorfilm:152m, 0.9w/mk) t h ,heatsinktemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 to247 advanced isolation to247 with insulator film (using same chip) figure 4. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 140 v ge =20v 17v 15v 13v 11v 9v 7v 5v g c e fully isolated package to-247
datasheet 7 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 5. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c = 25a i c = 50a i c = 100a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =0/15v, r g =7 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 20 40 60 80 100 1 10 100 t d(off) t f t d(on) t r g c e fully isolated package to-247
datasheet 8 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 9. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =0/15v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 60 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =0/15v, i c =50a, r g =7 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.58ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 2 3 4 5 6 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =0/15v, r g =7 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts g c e fully isolated package to-247
datasheet 9 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 13. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =0/15v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =0/15v, i c =50a, r g =7 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =0/15v, i c =50a, r g =7 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 16. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 40 80 120 160 200 240 0 2 4 6 8 10 12 14 16 v cc =120v v cc =480v g c e fully isolated package to-247
datasheet 10 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 1e+4 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 50 100 150 200 250 300 350 400 450 500 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 2 4 6 8 10 12 14 figure 20. igbttransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - h) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 3.0e-3 1.6e-5 2 0.104852 2.6e-4 3 0.13662 2.2e-3 4 0.1914 0.018514 5 0.26906 0.201746 6 0.3091 0.902516 7 0.022616 15.90837 g c e fully isolated package to-247
datasheet 11 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 21. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - h) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.341 2.5e-4 2 0.56903 1.6e-3 3 0.28633 0.013093 4 0.34265 0.158585 5 0.36597 0.778817 6 0.023397 15.94388 figure 22. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 400 600 800 1000 1200 0 50 100 150 200 250 t vj = 25c, i f = 25a t vj = 175c, i f = 25a figure 23. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t vj = 25c, i f = 25a t vj = 175c, i f = 25a figure 24. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 200 400 600 800 1000 1200 0 3 6 9 12 15 18 21 24 t vj = 25c, i f = 25a t vj = 175c, i f = 25a g c e fully isolated package to-247
datasheet 12 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation figure 25. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 400 600 800 1000 1200 -900 -800 -700 -600 -500 -400 -300 -200 -100 0 t vj = 25c, i f = 25a t vj = 175c, i f = 25a figure 26. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 4 0 20 40 60 80 100 120 140 t vj = 25c t vj = 175c figure 27. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 1.00 1.25 1.50 1.75 2.00 2.25 i f = 12.5a i f = 25a i f = 50a g c e fully isolated package to-247
datasheet 13 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation g c e fully isolated package to-247 1 revision 0 2 05 .0 6 .201 8 issue date european projection 0 scale 8mm pg- to 247-3- ai (pg-hsip247-3) document no. z8b00186434 a2 b d c e e l q ?p l1 d1 a dimensions a1 2.59 2.23 5.44 22.20 0.50 1.10 1 5 .70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 1 5 .90 17.16 millimeters min. - 4.70 max. 5.18 4.90 3:1 2 3 4 5 6 7 a3 0.28 0.20 e1 13.68 13.88 ?p1 5.70 5.90 note: for a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in inte rnational standard (iec60068-2-6 and iec60068-2-27). the advanced isolation device is intended only to be used assembled on an appropriat e heatsink with recommended flatness of <20m per 100mm and roughness of <10m.
datasheet 14 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation g c e fully isolated package to-247 1 revision 0 2 05 .0 6 .201 8 issue date european projection 0 scale 8mm pg- to 247-3- ai (pg-hsip247-3) document no. z8b00186434 a2 b d c e e l q ?p l1 d1 a dimensions a1 2.59 2.23 5.44 22.20 0.50 1.10 1 5 .70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 1 5 .90 17.16 millimeters min. - 4.70 max. 5.18 4.90 3:1 2 3 4 5 6 7 a3 0.28 0.20 e1 13.68 13.88 ?p1 5.70 5.90 note: for a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in inte rnational standard (iec60068-2-6 and iec60068-2-27). the advanced isolation device is intended only to be used assembled on an appropriat e heatsink with recommended flatness of <20m per 100mm and roughness of <10m. t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.1 2017-09-21 IKFW60N60DH3E trenchstop tm advancedisolation revisionhistory IKFW60N60DH3E revision:2017-09-21,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2017-09-21 final data sheet g c e fully isolated package to-247 1 revision 0 2 05 .0 6 .201 8 issue date european projection 0 scale 8mm pg- to 247-3- ai (pg-hsip247-3) document no. z8b00186434 a2 b d c e e l q ?p l1 d1 a dimensions a1 2.59 2.23 5.44 22.20 0.50 1.10 1 5 .70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 1 5 .90 17.16 millimeters min. - 4.70 max. 5.18 4.90 3:1 2 3 4 5 6 7 a3 0.28 0.20 e1 13.68 13.88 ?p1 5.70 5.90 note: for a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in inte rnational standard (iec60068-2-6 and iec60068-2-27). the advanced isolation device is intended only to be used assembled on an appropriat e heatsink with recommended flatness of <20m per 100mm and roughness of <10m. t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2018. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductis not qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e fully isolated package to-247 1 revision 0 2 05 .0 6 .201 8 issue date european projection 0 scale 8mm pg- to 247-3- ai (pg-hsip247-3) document no. z8b00186434 a2 b d c e e l q ?p l1 d1 a dimensions a1 2.59 2.23 5.44 22.20 0.50 1.10 1 5 .70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 1 5 .90 17.16 millimeters min. - 4.70 max. 5.18 4.90 3:1 2 3 4 5 6 7 a3 0.28 0.20 e1 13.68 13.88 ?p1 5.70 5.90 note: for a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in inte rnational standard (iec60068-2-6 and iec60068-2-27). the advanced isolation device is intended only to be used assembled on an appropriat e heatsink with recommended flatness of <20m per 100mm and roughness of <10m. t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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