2013. 1. 3 1/2 semiconductor technical data kds160f silicon epitaxial planar diode revision no : 1 ultra high speed switching application. features h small package : tfsc. h low forward voltage. h fast reverse recovery time. h small total capacitance. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d * 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm.
2013. 1. 3 2/2 kds160f revision no : 1
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