urg e overload rating to 135a peak es5 bbf 5 .0 es5 abf ? es5 jbf es5 abf s u nit s y mbol characteristic ca se : smbf, molded plastic classification rating 94v-o super-fast recovery time ideally suited for automatic assembly low power loss a surf a c e mount glass passivated superfast diode features ! gl as s passivated die construction ! ! low forward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanical d a ta ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! weight: 0.057 grams (approx.) ! lead free: for rohs / lead free version maximum ra t ings and electrical characteristics @t a =25c unl ess otherwise specified peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 300 400 600 v rms revers e voltage v r(rms) 35 70 105 140 210 280 420 v average rec tified output current @t l = 100c i o 5.0 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 135 a forward vo ltage @i f = 5. 0a v fm 0.95 1.25 1.7 v pea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100 c i rm 5.0 100 a reverse rec o very time (note 1) t rr 35 ns ty pi cal junction capacitance (note 2) c j 95 pf ty pi cal thermal resistance (note 3) r jl 45 c / w operati ng and s torage temperature range t j, t stg -65 to +150 c note: 1. m easured with i f = 0.5a , i r = 1 . 0a, i rr = 0. 25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. 1 of 2 es5 abf ? es5 jbf z ibo seno electronic engineering co., ltd. www.senocn.com a b c d f e g es5 cbf es5 dbf es5 ebf es5 gbf es5 jbf smbf 4.40 4.20 3.70 3.50 di m min max a b c d e f g a ll d imensions in mm 0.26 0.18 5.50 5.10 1.30 1.10 1.00 - 2.20 1.90 a l l d a t a s h e e t
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i , inst antaneous forward current (a) f v , inst ant aneous for ward voltage (v) fig. 2 typical forward characteristics f t = 25 c pulse width = 300 s j m 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 1 10 100 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25 c f = 1.0mhz j - - 2.0 3.0 25 75 100 50 125 150 175 i , a verage rectified current (a) o t , terminal temperature ( c) fi . 1 forward current deratin curve t 4.0 5. 0 0 40 60 80 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig . 3 surg e current derating curve single half-sine-w ave (jedec method) 100 120 140 singlephasehalfwave resistiveorinductiveload es5abf-es5dbf ES5EBF-es5gbf es5jbf es5 abf ? es5 jbf es5 abf ? es5 jbf a l l d a t a s h e e t
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