SDBN500B01 500ma npn transistor swit ch with snubber diode new product general description ? SDBN500B01 is best suited for switching inductive loads in power switching applications. it improves efficiency and reliability of power switching systems and it can support continuous maximum current of 500 ma. it features npn transistor with high breakdown voltage and discrete switching diode with high forward surge current. it reduces component count, consumes less space and minimizes parasitic losses. the component devices can be used as a part of a circuit or as a stand alone discrete device. features ? npn transistor with high break-down voltage ? switching diode with high forward surge ? low switching and conduction losses ? surface mount package suited for automated assembly ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-363 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see figure ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking and type code information: see page 6 ? ordering information: see page 6 ? weight: 0.016 grams (approximate) sub-component p/n reference device type mmbta06_die q1 npn transistor bas31_die d1 switching diode sot-363 1 2 3 4 5 6 4 eq1 bq1 3 6 cd1 d1 1 ad1 nc cq1 q1 5 2 schematic and pin configuration maximum ratings: total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 200 mw power derating factor above 25 c p der 1.6 mw / c output current i out 500 ma thermal characteristics characteristic symbol value unit junction operating and storage temperature range t j , t stg -55 to +150 c thermal resistance, junction to ambient air (note 3) (equivalent to one heated junction of npn transistor) r ja 625 c/w notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www .diodes.com/products/lead_free/index. php. 3. device mounted on fr-4 pcb, 1" x 0.85" x 0.062"; pad layout as shown on diodes inc. suggested pad layout do cument ap02001, which can be found on our website at http://www.diodes.com /datasheets/ap02001.pdf. ds30835 rev. 3 - 2 1 of 6 www.diodes.com SDBN500B01 ? diodes incorporated
maximum ratings: new product sub-component device ? switching diode (d1) @t a = 25c unless otherwise specified characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (page 1: note 3) i fm 500 ma average rectified output current (page 1: note 3) i o 250 ma non-repetitive peak forward surge current @ t = 1.0 us 4 a @ t = 1.0 s i fsm 2 a sub component device - discrete npn transistor (q1) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 4 v output current - continuous (page 1: note 3) i c 500 ma electrical characteristics: switching diode (d1) @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 4) v (br)r 75 ? ? v i r = 10 a 0.62 ? 0.37 i f = 5 ma ? ? 0.855 i f = 10 ma ? ? 1 i f = 100 ma forward voltage drop (note 4) v fm ? ? 1.25 v i f = 150 ma ? ? 2.5 v r = 75v ? ? 50 v r = 75v, t j = 150 c ? ? 30 v r = 25v, t j = 150 c reverse current (note 4) i r ? ? 25 a v r = 20v total capacitance c t ? ? 4 pf v r = 0v, f = 1.0 mhz reverse recovery time t rr ? ? 4 ns i f = i r = 10ma, i rr = 0.1xi r , r l = 100 notes: 4. short duration pulse test used to minimize self-heating effect. new product ds30835 rev. 3 - 2 2 of 6 www.diodes.com SDBN500B01 ? diodes incorporated
discrete npn transistor (q1) @t a = 25c unless otherwise specified new product characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v br(cbo) 80 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage v br(ceo) 80 ? v i c = 1.0 ma, i b = 0 emitter-base breakdown voltage v (br)ebo 4 ? v i e = 100 a, i c = 0 collector cutoff current i cex ? 100 na v ce = 60v, v eb(off) = 3.0v base cutoff current (i bex ) i bl ? 100 na v ce = 60v, v eb(off) = 3.0v collector-base cut off current i cbo ? 100 na v cb = 80v, i e = 0 collector-emitter cut off current, i o(off) i ceo ? 100 na v ce = 80v, i b = 0 emitter-base cut off current i ebo ? 100 na v eb = 5v, i c = 0 on characteristics (note 4) 60 ? ? v ce = 1v, i c = 100 a 80 ? ? v ce = 1v, i c = 1 ma 100 ? ? v ce = 1v, i c = 10 ma 100 ? ? v ce = 1v, i c = 50 ma 90 ? ? v ce = 1v, i c = 100 ma dc current gain h fe 80 ? ? v ce = 1v, i c = 200 ma ? 0.1 v i c = 10 ma, i b = 1 ma ? 0.25 v i c = 100 ma, i b = 10 ma collector-emitter saturation voltage v ce(sat) ? 0.35 v i c = 200 ma, i b = 20 ma base-emitter turn-on voltage v be(on) ? 0.98 v v ce = 5v, i c = 2 ma ? 0.95 v i c = 10 ma, i b = 1 ma base-emitter saturation voltage v be(sat) ? 1.2 v i c = 100 ma, v ce = 1v small signal characteristics output capacitance c obo ? 4 pf v cb = 5.0 v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 6 pf v eb = 5.0 v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 100 ? mhz v ce = 2 v, i c = 10ma, f = 100mhz switching characteristics delay time t d ? 35 ns rise time t r ? 35 ns v cc = 3.0 v, i c = 10ma, v be(off) = 0.5v, i b1 = 1.0ma pulse test: pulse width, tp<300us, duty cycle, d<=2% notes: 4. short duration pulse test used to minimize self-heating effect. typical characteristics 0 50 100 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, maximum power dissipation vs. ambient temperature a 150 200 250 r = 625c/w ja ds30835 rev. 3 - 2 3 of 6 www.diodes.com SDBN500B01 ? diodes incorporated
switching diode (d1) characteristics new product 10 100 1,000 1 0.1 0 1.6 1.2 0.4 0.8 i , ins t an t ane o u s f o r wa r d c u r r en t (ma) f v , instantaneous forward voltage (v) fig. 2, typical forward characteristics f 0.1 1 10 100 1,000 10,000 0 20 40 60 80 100 v , reverse voltage (v) fig. 3, typical reverse characteristics r i, i n s t a n t a n e o u s r eve r se c u r r e n t (na) r t = -40oc a t = 25oc a t = 75oc a t = 125oc a t = 0oc a 0 0.5 1 2.5 2 1.5 3 01020 40 30 50 c , t o t al c a p a c i t an c e (p f ) t v , reverse voltage (v) fig. 4, typical capacitance vs. reverse voltage r f = 1mhz i, c o lle c t o r -base c u r r en t (na) cbo t , ambient temperature (oc) fig. 5, i vs t a cbo a 10 0.01 0.1 1 25 50 75 100 125 v = 80v cb 0.001 0.01 i base current (ma) fig. 6, v vs i b, ce b 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 v, c o lle c t o r emi t t e r v o l t a g e (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c 11 0 100 1,000 v, c o ll e c t o r t o e m i t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 7, v vs i c ce(sat) c t = 25c a t = -50c a t = 150c a 0.050 0 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 i i c b = 10 ds30835 rev. 3 - 2 4 of 6 www.diodes.com SDBN500B01 ? diodes incorporated
1 10 1,000 10,000 100 1 10 1,000 100 h, d c c u r r e n t g ai n fe i , collector current (ma) fig. 8, h vs i c fe c 0.1 0.2 0.1 11 0 v , base emi 1 0 0 t t e r v o l t a g e (v) be(on) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v = 5v ce i , collector current (ma) fig. 9, v vs i c be(on) c t = -50c a t = 25c a t = 150c a 1 10 1,000 100 1 10 f, g ain bandwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 10, f vs i c t c new product application details: npn transistor (mmbta06) and switching diode (bav70) integrated as one in SDBN500B01 can be used as a discrete entity for general applications or part of a circuit to f unction as low side switch for sinking current. npn is selected based on high break-down voltage and maximum collector current range. switching diode is selected based on instantaneous forward surge current. the switching diode dissipates very little power because it is on for only a small portion of the switching cycle. it is designed to replace the discrete npn transistor and a switching diode in two separate packages into one small package as shown in figure . it consumes less board space and also helps to minimize conduction or switching losses due to parasitic inductances (e.g. pcb traces) in po wer switch applications. (please see fig. 11 for one example of ty pical application circuit used in conjunction with dc-dc converter as a part of the power management system). r1 r2 SDBN500B01 inductive load v supply fig. 11, typical application circuit ds30835 rev. 3 - 2 5 of 6 www.diodes.com SDBN500B01 ? diodes incorporated
ordering information (note 5) new product device marking code packaging shipping SDBN500B01-7 rd07 sot-363 3000/tape & reel notes: 5. for packaging details, please see below or go to our website at http://www.di odes.com/datasheets/ap02007.pdf. marking information rd07 ym rd07 = product type marking code, ym = date code marking y = year e.g. t = 2006 m = month e.g. 9 = september date code key year 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d mechanical details ds30835 rev. 3 - 2 6 of 6 www.diodes.com SDBN500B01 ? diodes incorporated suggested pad layout: (based on ipc-sm-782) mportant notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. a m j l d f b c h k sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm x z y c e e g dimensions value z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 all dimensions in mm
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