inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1383 description high dc current gain : h fe = 2000(min.)@ i c = -12a, v ce = -4v high collector-emitter breakdown voltage- : v (br)ceo = -120v(min) complement to type 2sd2083 applications designed for driver of solenoid, motor and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -6 v i c collector current-continuous -25 a i cm collector current-peak -40 a i b b base current- continuous -2 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1383 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma ,i b = 0 b -120 v v ce (sat) collector-emitter saturation voltage i c = -12a ,i b = -24ma -1.8 v v be (sat) base-emitter saturation voltage i c = -12a ,i b = -24ma -2.5 v i cbo collector cutoff current v cb = -120v, i e = 0 -10 a i ebo emitter cutoff current v eb = -6v, i c = 0 -10 ma h fe dc current gain i c = -12a ; v ce = -4v 2000 c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 230 pf f t current-gain?bandwidth product i e = 1a ; v ce = -12v 50 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = -12a,i b1 = -i b2 = -24ma; v cc = - 24v, r l = 2 1.0 s isc website www.iscsemi.cn
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