inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUX77 description contunuous collector current-i c = 5a collector power dissipation- : p c = 40w @t c = 25 collector-emitter sustaining voltage- : v ceo(sus) = 80v(min) applications designed for use in switching regulators and general purpose power amplifiers. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 4.4 /w symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i b base current-continuous 0.8 a p c collector power dissipation@t c =25 40 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUX77 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 50ma; i b = 0 80 v v ces collector-emitter voltage i c = 2ma; v be = 0 100 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a 1.0 v v be( on ) base-emitter on voltage i c = 5a; i b = 0.5a 1.3 v i ceo collector cutoff current v ce = 60v; i b = 0 10 a i cbo collector cutoff current v cb = 80v; i e = 0 v cb = 80v; i e = 0, t c =150 0.5 150 a i ebo emitter cutoff current v eb = 4v; i c = 0 0.5 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 70 h fe-2 dc current gain i c = 2a; v ce = 5v 50 120 h fe-3 dc current gain i c = 5a; v ce = 5v 30 h fe-4 dc current gain i c = 1a; v ce = 5v; t c = -40 25 f t current-gainbandwidth product i c = 0.5a; v ce = 5v 1.5 mhz switching times t r rise time i c = 5a; i b1 = -i b2 = 0.5a; v cc = 40v 0.2 s t s storage time 0.5 s t f fall time 0.2 s
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