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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.2 www.infineon.com 2017-11-30 IKA10N65ET6 trenchstop?igbt6 igbtintrenchandfield-stoptechnologywithsoft,fastrecoveryanti-parallel rapiddiode featuresandbenefits: ?verylowv ce(sat) 1.5v(typ.) ?maximumjunctiontemperature175c ?shortcircuitwithstandtime3s trenchandfield-stoptechnologyfor650vapplicationsoffers: ?verytightparameterdistribution ?highruggedness,temperaturestablebehavior ?lowv cesat andpositivetemperaturecoefficient ?lowgatechargeq g ?pb-freeleadplating;rohscompliant ?verysoft,fastrecoveryanti-parallelrapiddiode ?completeproductspectrumandpspicemodels: www.infineon.com/igbt potentialapplications: drives ?gpd(generalpurposedrives) majorhomeappliances ?airconditioning ?othermajorhomeappliances smallhomeappliances ?othersmallhomeappliances keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKA10N65ET6 650v 10a 1.5v 175c k10eet6 pg-to220-3 fp g c e g c e
datasheet 2 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g c e
datasheet 3 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax 1) t c =25c t c =100c i c 15.0 9.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 42.5 a turnoffsafeoperatingarea v ce 650v, t vj 175c - 42.5 a diodeforwardcurrent,limitedby t vjmax 1) t c =25c t c =100c i f 15.0 9.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 42.5 a gate-emitter voltage transientgate-emittervoltage( t p 10s, d <0.010) v ge 20 30 v short circuit withstand time v ge =15.0v, v cc 360v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 3 s powerdissipation t c =25c powerdissipation t c =100c p tot 40.0 20.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m2.5 screw, pg-to220-3 fp maximum of mounting processes: 3 m 0.5 nm isolationvoltagerms, f =50/60hz, t =1min v isol 2500 v thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, junction - case r th(j-c) - - 3.71 k/w diode thermal resistance, junction - case r th(j-c) - - 5.40 k/w thermal resistance junction - ambient r th(j-a) - - 65 k/w 1) limited by maximum junction temperature. applicable for to220 standard package. g c e g c e
datasheet 4 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage 1) v (br)ces v ge =0v, i c =0.10ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =8.5a t vj =25c t vj =125c t vj =175c - - - 1.50 1.65 1.75 1.90 - - v diode forward voltage v f v ge =0v, i f =8.5a t vj =25c t vj =125c t vj =175c - - - 1.45 1.43 1.39 1.90 - - v gate-emitter threshold voltage v ge(th) i c =0.15ma, v ce = v ge 4.8 5.6 6.4 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 360 30 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =8.5a - 8.7 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 790 - output capacitance c oes - 41 - reverse transfer capacitance c res - 12 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =8.5a, v ge =15v - 27.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 360v, t sc 3s t vj =150c - 80 - a 1) measured with filter network. g c e g c e
datasheet 5 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 30 - ns rise time t r - 18 - ns turn-off delay time t d(off) - 106 - ns fall time t f - 46 - ns turn-on energy e on - 0.20 - mj turn-off energy e off - 0.07 - mj total switching energy e ts - 0.27 - mj t vj =25c, v cc =400v, i c =8.5a, v ge =0.0/15.0v, r g(on) =47.0 w , r g(off) =47.0 w , l s =30nh, c s =150pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 51 - ns diode reverse recovery charge q rr - 0.21 - c diode peak reverse recovery current i rrm - 5.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -440 - a/s t vj =25c, v r =400v, i f =8.5a, di f /dt =450a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 27 - ns rise time t r - 18 - ns turn-off delay time t d(off) - 123 - ns fall time t f - 72 - ns turn-on energy e on - 0.22 - mj turn-off energy e off - 0.13 - mj total switching energy e ts - 0.35 - mj t vj =150c, v cc =400v, i c =8.5a, v ge =0.0/15.0v, r g(on) =47.0 w , r g(off) =47.0 w , l s =30nh, c s =150pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 92 - ns diode reverse recovery charge q rr - 0.46 - c diode peak reverse recovery current i rrm - 7.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -205 - a/s t vj =150c, v r =400v, i f =8.5a, di f /dt =450a/s g c e g c e
datasheet 6 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v. recommendeduseat v ge 3 15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 t p = 1s figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[kw] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 v ge =20v 18v 15v 12v 10v 8v 7v 6.5v g c e g c e
datasheet 7 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 5. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 v ge =20v 18v 15v 12v 10v 8v 7v 6.5v figure 6. typicaltransfercharacteristic ( v ce =50v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 7 9 11 13 0 5 10 15 20 25 30 35 40 45 t vj = 25c t vj = 150c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.4 1.8 2.2 2.6 i c = 4.3a i c = 8.5a i c = 17a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15v, r g =47 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 4 6 8 10 12 14 16 18 1 10 100 t d(off) t f t d(on) t r g c e g c e
datasheet 8 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =150c, v ce =400v, v ge =15v, i c =8.5a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 90 100 1 10 100 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15v, i c =8.5a, r g =47 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.15ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 2 3 4 5 6 typ. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15v, r g =47 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 4 6 8 10 12 14 16 18 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e off e on e ts g c e g c e
datasheet 9 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =150c, v ce =400v, v ge =15v, i c =8.5a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 90 100 0.00 0.10 0.20 0.30 0.40 0.50 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15v, i c =8.5a, r g =47 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =15v, i c =8.5a, r g =47 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 e off e on e ts figure 16. typicalgatecharge ( i c =8.5a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v g c e g c e
datasheet 10 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/kw] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.04912 3.0e-5 2 0.59182 3.3e-4 3 0.70826 2.6e-3 4 0.4711 0.02454 5 0.95942 0.3516 6 0.86219 2.227 7 0.06715 15.12 figure 19. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/kw] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 10 100 1e-4 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 3.4e-3 4.0e-6 2 0.1602 3.0e-5 3 1.569 3.2e-4 4 1.215 2.3e-3 5 0.551 0.0236 6 0.963 0.35107 7 0.8606 2.228 8 0.0673 15.16 figure 20. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 400 600 800 1000 1200 20 30 40 50 60 70 80 90 100 t vj = 25c, i f = 8.5a t vj = 150c, i f = 8.5a g c e g c e
datasheet 11 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 21. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 400 600 800 1000 1200 0.10 0.20 0.30 0.40 0.50 0.60 t vj = 25c, i f = 8.5a t vj = 150c, i f = 8.5a figure 22. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 400 600 800 1000 1200 5 6 7 8 9 10 11 12 t vj = 25c, i f = 8.5a t vj = 150c, i f = 8.5a figure 23. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 400 500 600 700 800 900 1000 1100 1200 -700 -600 -500 -400 -300 -200 -100 0 t vj = 25c, i f = 8.5a t vj = 150c, i f = 8.5a figure 24. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 35 40 45 t vj = 25c t vj = 150c g c e g c e
datasheet 12 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 figure 25. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i f = 4.25a i f = 8.5a i f =17a g c e g c e
datasheet 13 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 g c e g c e package drawing pg-to220-3-fp
datasheet 14 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 g c e g c e package drawing pg-to220-3-fp t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.2 2017-11-30 IKA10N65ET6 trenchstop?igbt6 revisionhistory IKA10N65ET6 revision:2017-11-30,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.1 2017-09-11 final datasheet 2.2 2017-11-30 new gfs value at vce=20v g c e g c e package drawing pg-to220-3-fp t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2017. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductis not qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e g c e package drawing pg-to220-3-fp t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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