jiangsu changjiang electron ics technology co., ltd to-251-3l plastic-encapsulate transistors MJD32C transistor (pnp) fea tures z designed for g eneral p urpose a mplifier and l ow s peed s witching a pplications z lead formed for surface mount applications in plastic sleeves (no suffix) z straight lead version in plastic sleeves (??1? suffix) z lead formed version in 16 mm tape and reel (?t4? suffix) z electrically similar to popular tip31 and tip32 series maximum ratings (t a =25 unless otherwise noted) symbol param eter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current -continuous -3 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -65-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min max u nit collector-base breakdown voltage v (br)cbo i c = -1ma, i e =0 -100 v collector-emitter breakdown voltage * v ceo (sus) i c = -30ma, i b =0 -100 v emitter-base breakdown voltage v (br)ebo i e = -1ma, i c =0 -5 v collector cut-off current i ces v ce =-100v, v eb =0 -20 a collector cut-off current i ceo v ce = -60v, i b = 0 -50 a emitter cut-off current i ebo v eb =-5v, i c =0 -1 ma h fe(1) v ce = -4v, i c =-1a 25 dc current gain h fe(2) v ce =-4 v, i c =-3a 1 5 7 5 collector-emitter saturation voltage v ce(sat) i c =-3a, i b =-0.375a -1.2 v base-emitter voltage v be(on) v ce = -4v, i c =-3a -1.8 v transition frequency f t v ce =-10v , i c =-0.5a,f t =1k hz 3 mh z * pulse test: pw 300s, duty cycle 2%. to-251-3l 1.base 2.collector 3.emitter www.cj-elec.com 1 f,jun,201 5
-0.1 -1 -10 10 100 1000 0 100 200 300 400 500 0 3 6 9 12 15 -1 -10 -100 -1000 0 50 100 150 200 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 -0 -100 -200 -300 -400 -500 -600 -0 -1 -2 -3 -4 -5 -6 -7 -8 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 -1000 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob -20 transition frequency f t (mhz) collector current i c (ma) v ce =-10v t a =25 o c i c f t ?? -3000 v ce = -4v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a -3000 -3000 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =8 i c v besat ?? -3000 t a =25 t a =100 =8 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -100ma -90ma -80ma -70ma -60ma -50ma -40ma -30ma -20ma i b =-10ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=-4v ta=25 ta=100 o c base-emitter voltage v be (v) collector current i c (ma) i c ?? v be www.cj-elec.com 2 f,jun,2015 typical characteristics
www.cj-elec.com 3 f , jun ,2015 to-251-3l package outline dimensions min. max. min. max. a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.200 5.400 0.205 0.213 e 5.400 5.700 0.213 0.224 e e1 4.500 4.700 0.177 0.185 l 7.500 7.900 0.295 0.311 symbol dimensions in millimeters dimensions in inches 2.300 typ. 0.091 typ.
|
