20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (212) 227-6005 usa rbv2500d - rbv251 od silicon bridge rectifiers prv: 50-1000 volts lo : 25 amperes features : * high current capability * high surge current capability * high reliability * low reverse current * low forward voltage drop * rated isolation-voltage 2000 vac * ideal for printed circuit board * very good heat dissipation * pb/rohsfree mechanical data: * case : reliable low cost construction utilizing molded plastic technique * epoxy : ul94v-0 rate flame retardant * terminals : plated lead solderable per mil-std-202, method 208 guaranteed * polarity : polarity symbols marked on case * mounting position : any * weight: 8.17 grams (approximaly ) rbv25 30 0.3 3.9 0.: 4.9 0.2 , *3.2 0.1 51= -lj 0.2 0.2 0.2 1.0 t\1 2.0 0.2 0.7 0. .2 - il *- '?'hi*- dimensions in millimeters maximum ratings and electrical characteristics ratina at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. rating maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward current tc = 55c peak forward surge current single half sine wave superimposed on rated load (jedec method) current squared time at t < 8.3 ms. maximum forward voltage per diode at if = 25 a maximum dc reverse current ta = 25 c at rated dc blocking voltage ta = 100 c typical thermal resistance (note 1) operating junction temperature range storage temperature range symbol vrrm vrms vdc ip(av) ifsm i2. vf ir |r(h) r6jc tj tstg rbv rbv rbv rbv 2500d 2501 d 2502d 2504d 50 100 200 400 35 70 140 280 50 100 200 400 25 400 375 1.1 10 200 1.2 - 40 to + 1 - 40 to + 1 rbv 2506d 600 420 600 50 50 rbv 2508d 800 560 800 rbv 2510d 1000 700 1000 unit v v v a a a2s v ka ua c/w c c notes : 1. thermal resistance from junction to case with units mounted on aj>"x6" x4.9" (12.8cm.x 15.2cm.x 12.4cm.) ai.-finned plate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going lo press. i lowcver, nj semi-conductors assumes no responsibility for any errors or omissions discovered in ils use. nj semi-conductors encourages customers to verily that datasheets are current before placing orders. quality semi-conductors
rating and characteristic curves ( rbv2500d - RBV2510D ) fig.1 - derating curve for output rectified current a_ tr co 2 w o a: a lu a: g: < 2 g< o: h- o z lj_ lu lu <* $5 a" lu 25 20 15 10 5 l_ he/ t-sink 5" x 6" bcmx 1 ai.-fi \- mounting, t x4,9"thk 5,2crnx12.4cm ined plate \ \ 25 50 75 100 125 150 175 case temperature, ( c) lu o: o lu o cr fig.2 - maximum non-repetitive peak forward surge current 300 o: o s q. co200 lu o: lu q. 150 1 100 \ ? n \ s 8. 3ms single hal v \v s mv c s jedec method ii \ \ 4 6 10 20 40 60 100 number of cycles at 60hz fig.3 - typical forward characteristics per diode peres o < h z lu l o no aavmi o u_ 0.01 0 1 0,6 1 f / f f / / / i t / / f =uls 1 -x1 ew %: dth uty ,.. 25 = 3 cyc c 30 (i le s 0.8 1.0 1.2 1.4 1.6 1 fig.4 - typical reverse characteristics per diode 20 40 60 80 100 120 140 percent of rated reverse voltage, (%) forward voltage, volts
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