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| i nchange semiconductor isc product specification isc w ebsite 1 isc & iscsemi is registered tra demark isc silicon pnp power transistors 2sb 5 0 3 description collector - emitter breakdown voltage - : v ( br )ceo = - 5 0v( min ) high power dissipation - : p c = 25 w(max)@t c =25 applications d esign ed for audio power amplifier and regulator applications . a bsolute maximum ratings (t a = 25 symbol parameter value unit v cbo collector - b ase v oltage - 7 0 v v ceo collector - e mitter v oltage - 5 0 v v ebo emitter - b ase v oltage - 8 v i c collector c urrent - conti nuous - 3 a p c collector p ower d issipat i on @ t a =25 1.5 w collector p ower d issipat i on @ t c =25 25 t j junction t emperature 150 t stg storage t emperature - 6 5 ~15 0
i nchange semiconductor isc product specification isc website isc silicon pnp power transistors 2sb 5 03 electrical characteris tics tj=25 v (br) ceo collector - e mitter breakdown v oltage i c = - 30m a; i b = 0 - 5 0 v v (br) c b o collector - base breakdown v oltage i c = - 0.1 m a; i e = 0 - 7 0 v v (br) ebo emitter - b ase breakd own v oltage i e = - 1 ma; i c = 0 - 8 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 3 a ; i b = - 0.3 a - 1.5 v v be ( sat ) base - e mitter s aturation v oltage i c = - 3 a ; i b = - 0.3 a - 1.8 v i cbo collector c utoff c urrent v cb = - 5 0v ; i e = 0 - 10 a i ebo emitter c utof f c urrent v eb = - 8 v; i c = 0 - 100 a h fe - 1 dc c urrent g ain i c = - 0.5 a; v ce = - 5 v 3 0 28 0 h fe - 2 dc c urrent g ain i c = - 2.5 a; v ce = - 5 v 15 c ob output capacitance i e = 0 ; v c b = - 10 v ; f= 1mhz 20 0 pf ? h fe classifications r o y 30 - 70 50 - 140 100 - 280 |
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