, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BC237/238/239 switching and amplifier applications ? low noise: bc239 npn epitaxial silicon transistor absolute maximum ratings t3=25c unless otherwise noted 1 to-92 1. collector 2. base 3. emitter symbol vces vceo vebo lc pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage : BC237 : bc238/239 : BC237 : bc238/239 : BC237 : bc238/239 collector current (dc) collector dissipation junction temperature storage temperature value 50 30 45 25 6 5 100 500 150 -55- 150 units v v v v v v ma mw c c electrical characteristics t,=25"c unless otherwise noted hfe classification symbol bvceo bvebo ices hfe vce (sat) vbe (sat) vbe (n) ff c0b cib nf parameter collector-emitter breakdown voltage : BC237 : bc238/239 emitter base breakdown voltage : BC237 : bc238/239 collector cut-off current : BC237 : bc238/239 dc current gain collector-emitter saturation voltage collector-base saturation voltage base-emitter on voltage current gain bandwidth product output capacitance input base capacitance noise figure : BC237/238 : bc239 : bc239 test condition lc=2ma, ib=0 ie=va, lc=0 vce=50v, vbe=0 vce=30v, vbe=0 vce=5v, lc=2rr,a lc=10ma, !b=0.5ma lc=100ma, !b=5ma lc=10ma, !b=0.5ma lc=100ma, !b=5ma vce=5v, lc=2ma vce=3v, lc=0.5ma, f=100mhz vce=5v, lc=10ma, f=100mhz vcb=10v, ie=0, f=1mhz veb=0.5v, lc=0, f=1mhz vce=5v, lc=0.2rna, f=1 khz rg=2kq vce=5v, lc=0.2ma rg=2kij, t=30-15khz min. 45 25 6 5 120 0.55 150 typ. 0.2 0.2 0.07 0.2 0.73 0.87 0.62 85 250 3.5 8 2 max. 15 15 800 0.2 0.6 0.83 1.05 0.7 6 10 4 4 units v v v v na na v v v v v mhz mhz pf pf db db db classification "re a 120-220 b 180-460 c 380 - 800 quality semi-conductors
to-92 0-46 >0.10 27typ 27 .m).20l f ^ ) 4.58 +0.20 14.47 o.? 1.27typ [1.27 10.20 (r2.29)
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