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power mosfets for stepper motors integrated circuits trinamic motion control gmbh & co. kg hamburg, germany tmc 1420 - la data sheet tmc262 with 4 x tmc1420 - la m osfets order code description size tmc1420 - la n and p - channel enhancement mode power mosfet 5 x 6 mm 2 p roduct s ummary n - ch p - ch bv dss r ds(on) i d 40v 26.5m 8.8a - 40v 42m - 7.3a f eatures and b enefits n & p - channel mosfet half bridge device simple drive requirement good thermal performance ir - reflow and backside heat sink fast switching performance for quick motor reaction pqfn package, 5x 6 mm rohs compliant and halogen - free a pplications tmc1420 mosfets fit best with trinamic 2 - phase bipolar stepper motor drivers: tmc262: up to 4 a rms motor current with 4xtmc 1420 - la tmc248: up to 3 .5 a rms motor current with 4xtmc 1420 - la tmc249 : up to 3 .5 a rms motor current with 4xtmc1420 - la d escription the tmc 1420 - la is highly energy efficient. employing silicon process technology, the tmc 1420 achieves an extremely low on - state resistance and fastest switching performance. the tmc 1420 - la is intended for power conversion and power management applications that require high efficiency and power density. the pqfn 5x6 package uses standard infrared reflow technique with the backside heat sink and has a very good thermal performance. the package is similar to other enhanced so - 8 packages in the market, such as lfpak and powerso - 8. dual n & p - channel 40v power mosfet with extremely low on - resistance. high energy efficiency and good thermal performance. + v m s r b r s e n s e s g d d g s p n m o t o r c o i l b h b 2 h b 1 b m b 1 b m b 2 s g d d g s p n l b 1 l b 2 + v m s r a r s e n s e d g s s g d p n m o t o r c o i l a h a 2 h a 1 b m a 1 b m a 2 d g s s g d p n l a 1 l a 2 1 0 r 1 0 r t m c 2 6 2 t m c 1 4 2 0 t m c 1 4 2 0 t m c 1 4 2 0 t m c 1 4 2 0
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 2 www.trinamic.com t able of contents 1 pin assignments ................................ ................................ ................................ ... 3 2 absolute maximum rat ings ................................ ................................ ................................ ... 3 3 thermal data ................................ ................................ ................................ ... 3 4 electrical character istics ................................ ................................ ................................ ... 4 4.1 n - ch @t j =25c ( unless otherwise specified ) ................................ ................................ ................................ ... 4 4.1.1 source - drain diode ................................ ................................ ................................ ................................ ....... 4 4.2 p - ch @t j =25c ( unless oth erwise specified ) ................................ ................................ ................................ ... 4 4.2.1 source - drain diode ................................ ................................ ................................ ................................ ....... 5 5 n - channel diagrams ................................ ................................ ................................ ... 6 6 p - channel diagrams ................................ ................................ ................................ ... 8 7 package mechanical d ata ................................ ................................ ................................ . 10 7.1 d imensional d rawings ................................ ................................ ................................ . 10 7.2 p ackage m arking i nformation ................................ ................................ ................................ . 10 7.3 p ackage c ode ................................ ................................ ................................ . 10 8 disclaimer ................................ ................................ ................................ . 11 9 esd sensitive device ................................ ................................ ................................ . 11 10 table of figures ................................ ................................ ................................ . 12 11 revision history ................................ ................................ ................................ . 12
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 3 www.trinamic.com 1 pin assignments figure 1 . 1 tmc 1420 - la pin assignment s 2 absolute maximum ratings the maximum ratings may not be exceeded under any circumstances. operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. parameter symbol n - channel p - channel unit drain - source voltage v ds 40 - 40 v gate - source voltage v gs 20 20 v continuous drain current * 2 i d @t a = 25 c 8.8 - 7.3 a continuous drain current * 2 i d @t a = 70 c 7 - 5.8 a pulsed drain current * 1 i dm 30 - 30 a total power dissipation p d @t a = 25 c 3.57 w storage temperature range t stg - 55 to 150 c operating junction temperature range t j - 55 to 150 c * 1 pulse width is limited by maximum junction temperature. * 2 surface mounted on 1 in2 copper pad of fr4 board, t 10sec; 85?c/w at steady state. 3 thermal data parameter symbol n - channel p - channel unit max. thermal resistance, junction - case rthj - c 6 6 c/w max. thermal resistance, junction - ambient * rthj - a 35 35 c/w * surface mounted on 1 in 2 copper pad of fr4 board, t 10sec; 85?c/w at steady state. p q f n 5 x 6 4 3 2 1 8 7 6 5 b a c k s i d e v i e w g 2 s 2 g 1 s 1 f r o n t v i e w / i n t e r n a l c i r c u i t d 1 d 1 d 2 d 2 d 2 d 2 d 1 d 1 s 1 g 1 s 2 g 2
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 4 www.trinamic.com 4 electrical characteristics 4.1 n - ch @tj=25c (unless otherwise specified) parameter symbol test conditions min typ max unit drain - source breakdown voltage bv dss v gs =0v, i d =250a 40 v static drain - source on - resistance * r ds(on) v gs =10v, i d =7a v gs =4.5v, i d =5a 21.2 32.7 26.5 45 m m gate threshold voltage v gs(th) v ds = v gs , i d =250a 1 1.7 3 v forward transconductance g fs v ds = 10v, i d =7a 14 s drain - source leakage current i dss v ds = 32 v , v gs = 0v 10 ma gate - source leakage i gss v ds = 0v, v gs =20v 30 ma total gate charge q g i d =7a v ds =20v v gs =4.5v 7 11.2 nc gate - source charge q gs 2.2 nc gate - drain ("miller") charge q g d 3.7 nc turn - on delay time t d(on) v ds =20v i d =1a r g =3.3 v gs =5v 6 ns rise time t r 18 ns turn - off delay time t d(off) 17 ns fall time t f 19 ns input capacitance c iss v gs =0v v ds =15v f=1.0mhz 660 1050 pf output capacitance c oss 120 pf reverse transfer capacitance c rss 75 pf gate resistance r g f=1.0mhz 2.2 4.4 * pulse test 4.1.1 source - drain diode parameter symbol test conditions min typ max unit forward on voltage * v s d v gs =0v, i s =2.9a 1.2 v reverse recovery time t rr v gs =0v, i s =7a dl/dt=100a/s 24 ns reverse recovery charge q rr 21 nc * pulse test 4.2 p - ch @tj=25c (unless otherwise specified) parameter symbol test conditions min typ max unit drain - source breakdown voltage bv dss v gs =0v, i d = - 250a - 40 v static drain - source on - resistance * r ds(on) v gs = - 10v, i d = - 5a v gs = - 4.5v, i d = - 3a 33.3 53.3 42 70 m m gate threshold voltage v gs(th) v ds = v gs , i d = - 250a - 1 - 1.7 - 3 v forward transconductance g fs v ds = - 10v, i d = - 5a 11 s drain - source leakage current i dss v ds = - 32v, v gs =0v - 10 ma gate - source leakage i gss v ds = 0v, v gs =20v 30 ma total gate charge q g i d = - 5a v ds = - 20v v gs = - 4.5v 11.5 18.4 nc gate - source charge q gs 2.3 nc gate - drain ("miller") charge q g d 7 nc turn - on delay time t d(on) v ds = - 20v i d = - 1a r g =3.3 v gs = - 5v 7 ns rise time t r 20 ns turn - off delay time t d(off) 34 ns fall time t f 29 ns input capacitance c iss v gs =0v v ds = - 15v f=1.0mhz 720 1150 pf output capacitance c oss 205 pf reverse transfer capacitance c rss 165 pf gate resistance r g f=1.0mhz 6 12 * pulse test
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 5 www.trinamic.com 4.2.1 source - drain diode parameter symbol test conditions min typ max unit forward on voltage * v s d v gs =0v, i s = - 2.9a - 1.2 v reverse recovery time t rr v gs =0v, i s = - 5 a dl/dt=100a/s 32 ns reverse recovery charge q rr 34 nc * pulse test
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 6 www.trinamic.com 5 n - channel diagrams figure 5 . 1 typical output c haracteristics figure 5 . 2 typical output c haracteristics figure 5 . 3 on - resistance v.s. gate v oltage figure 5 . 4 normalized o n - resistance v.s. junction t emperature figure 5 . 5 forward characteristic of reverse d iode figure 5 . 6 gate threshold voltage v.s. junction t emperature
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 7 www.trinamic.com n - channel diagrams figure 5 . 7 gate charge c haracteristics figure 5 . 8 typical capacitance c haracteristics figure 5 . 9 maximum safe operating a rea figure 5 . 10 effective transient thermal i mpedance figure 5 . 11 tra nsfer c haracteristics figure 5 . 12 maximum continuous drain current v.s. ambient t emperature
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 8 www.trinamic.com 6 p - channel diagrams figure 6 . 1 typical o utput c haracteristics figure 6 . 2 typical output c haracteristics figure 6 . 3 on - resistance v.s. gate v oltage figure 6 . 4 normalized on - resistance v.s. junction t emperature figure 6 . 5 forward characteristic of r everse d iode figure 6 . 6 gate threshold voltage v.s. junction t emperature
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 9 www.trinamic.com p - channel diagrams figure 6 . 7 gate charge c haracteristics figure 6 . 8 typical capacitance c haracteristics figure 6 . 9 maximum s afe o perating a rea figure 6 . 10 effective t ransient t hermal i mpedance figure 6 . 11 transfer c haracteristics figure 6 . 12 maximum c ontinuous d rain c urrent v.s. a mbient t emperature
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 10 www.trinamic.com 7 package mechanical data 7.1 pqfn 5x6 dimensional drawings figure 7 . 1 dimensional drawings 7.2 package marking information figure 7 . 2 package marking information 7.3 package code device package temperature range code/ marking tmc 1420 pqfn 5x6 - 55 to +1 50 c tmc 1420 - la symbols min nom max a 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 d1 4.80 4.90 5.10 d2 4.20 e 5.90 6.00 6.10 e1 (reference) 5.70 5.75 5.80 e2 (reference) 3.38 3.58 3.78 e 1.27 bsc h 0.62 k (reference) 0.70 l 0.51 0.61 0.71 l1 0.20 (reference) 0? 12? note : all dimensions are in millimeters. drawings are not to scale. the dimensions do not include mold protrusions. t m c 1 4 2 0 y w w s s s p a r t n u m b e r m e e t r o h s r e q u i r e m e n t f o r l o w v o l a t a g e m o s f e t o n l y p a c k a g e c o d e d a t e c o d e y : l a s t d i g i t o f y e a r w w : w e e k s s s : s e q u e n c e
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 11 www.trinamic.com 8 disclaimer trinamic motion control gmbh & co. kg does not authorize or warrant any of its products for use in life support systems, without the specific written consent of trinamic motion control gmbh & co. kg. life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. information given in this data sheet is believed to be accurate and reliable. however no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. specifications are subject to change without notice. all trademarks used are property of their respective owners. 9 esd sensitive device the tmc 1420 - la is an esd sensitive cmos device sensitive to electrostatic discharge. take special care to use adequate grounding of personnel and machines in manual handling. after soldering the devices to the board, esd requirements are more relaxed. failure to do so can res ult in defect or decreased reliability.
tmc1420 - la datasheet (rev. 1.0 1 / 2014 - may - 12 ) 12 www.trinamic.com 10 table of f igures figure 1.1 tmc 1420 pin assignments ................................ ................................ ................................ .............................. 3 figure 5.1 typical output characteristics ................................ ................................ ................................ ........................ 6 figure 5.2 typical output characteristics ................................ ................................ ................................ ........................ 6 figure 5.3 on - resistance v.s. gate voltage ................................ ................................ ................................ ..................... 6 figure 5.4 normalized on - resistance v.s. junction temperature ................................ ................................ ............. 6 figure 5.5 forward characteristic of reverse diode ................................ ................................ ................................ .... 6 figure 5.6 gate threshold voltage v.s. junction temperature ................................ ................................ .................. 6 figure 5.7 gate charge characteristics ................................ ................................ ................................ ............................ 7 figure 5.8 typical capacitance characteristics ................................ ................................ ................................ ............... 7 figure 5.9 maximum safe operating area ................................ ................................ ................................ ...................... 7 figure 5.10 effective transient thermal impedance ................................ ................................ ................................ .... 7 figure 5.11 transfer characteristics ................................ ................................ ................................ ................................ . 7 figure 5.12 maximum continuous drain current v.s. ambient temperature ................................ ........................ 7 figure 6.1 typical output characteristics ................................ ................................ ................................ ........................ 8 figure 6.2 typical output characteristics ................................ ................................ ................................ ........................ 8 figure 6.3 on - resistance v.s. gate voltage ................................ ................................ ................................ ..................... 8 figure 6.4 normalized on - resista nce v.s. junction temperature ................................ ................................ ............. 8 figure 6.5 forward characteristic of reverse diode ................................ ................................ ................................ .... 8 figure 6.6 gate threshold voltage v.s. junction temperature ................................ ................................ ................. 8 figure 6.7 gate charge characteristics ................................ ................................ ................................ ............................ 9 figure 6.8 typical capacitance characteristics ................................ ................................ ................................ ............... 9 figure 6.9 maximum safe operating area ................................ ................................ ................................ ...................... 9 figure 6.10 effective transient thermal impedance ................................ ................................ ................................ .... 9 figure 6.11 transfer characteristics ................................ ................................ ................................ ................................ . 9 figure 6.12 maximum continuous drain current v.s. ambient temperature ................................ ........................ 9 figure 7.1 dimensional drawings ................................ ................................ ................................ ................................ .. 10 figure 7.2 package marking information ................................ ................................ ................................ ..................... 10 11 revision history version date author sd C sonja dwersteg description 1.0 0 2013 - mar - 1 8 sd initial version 1.01 2014 - may - 12 sd rms motor current values in combination with tmc262, tmc248, and tmc249 updated. t able 11 . 1 documentation revisions

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