s1 d ls - S1MLS tai wan semiconductor 1 version:f 1707 1.2a, 2 00v - 1000v surface mount rectifier features ideal for automated placement compact package size high surge current capability low power loss, high efficiency compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 applications switching mode power supply (smps) adapters lighting application converter mechanical data case: sod - 123he molding compound meets ul 94v - 0 flammability rating part no. with suffix "h" means aec - q101 qualified packing code with suffix "g" means green compound (halogen - free) moisture sensitivity level: level 1, per j - std - 020 terminal: matte tin plated leads, solderable per j - std - 002 meet jesd 201 class 2 whisker test polarity: as marked weight: 0.022g (approximately) key parameters p arameter value unit i f(av) 1.2 a v rrm 2 00 - 1000 v i fsm 50 a t j max 1 75 c package sod - 123 he configuration single die sod - 123 he absolute m aximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol s 1dls s1gls s1jls s1kls S1MLS unit marking code on the device 1dls 1gls 1jls 1kls 1mls repetitive peak reverse voltage v rrm 200 400 600 800 1000 v reverse voltage, total rms value v r(rms) 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v forward current i f(av) 1.2 a surge peak forward current, 8.3 ms single half sine - wave superimposed on rated load per diode i fsm 50 a junction temperature t j - 55 to +1 75 c storage temperature t stg - 55 to +1 75 c
s1 d ls - S1MLS tai wan semiconductor 2 version:f 1707 thermal performance p arameter s ymbol l imit unit junction - to - lead thermal r esistance per diode r ? j l 46 c /w junction - to - a mbient thermal r esistance per diode r ? j a 86 c /w junction - to - case thermal r esistance per diode r ? j c 50 c /w thermal performance note: units mounted on recommended pcb (5mm x 5mm cu pad test board ) electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol t yp m ax u nit forward voltage per diode (1) i f = 1.2 a, t j = 25 c v f - 1.3 v reverse current @ rated v r per diode (2) t j = 25 c i r - 5 a t j = 125 c - 15 0 a notes: 1. pulse test with pw=0.3 ms 2. pulse test with pw= 30 ms ordering information part no. part no. suffix packing code packing code suffix package packing s1xls (note 1,2) h rv g sod - 123he 3,000 / 7" reel rq sod - 123he 10,000 / 13" reel notes: 1. "x" defines voltage from 2 00v ( s 1dls ) to 1000v ( s 1mls ) 2. whole series with green compound ( halogen - free) example p/n example p/n part no. part no. suffix packing code packing code suffix description S1MLShrvg S1MLS h rv g aec - q101 qualified green compound
s1 d ls - S1MLS tai wan semiconductor 3 version:f 1707 characteristics curves (t a = 25c unless otherwise noted) fig.1 forward current derating curve fig.2 typical junction capacitance fig.3 typical reverse characteristics fig . 4 typical forward characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 1 10 100 0.1 1 10 100 reverse voltage (v) f=1.0mhz vsig=50mvp - p 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 t j =125 c t j =25 c 0.1 1 10 0.7 0.8 0.9 1 1.1 1.2 1.3 capacitance (pf) instantaneous reverse current ( a) percent of rated peak reverse voltage (%) instantaneous forward current (a) (a) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 pulse width t j =25 c t j =125 c uf1dlw forward voltage (v) average forward current (a) case temperature (c) heat sink 5mm x 5mm cu pad test board
s1 d ls - S1MLS tai wan semiconductor 4 version:f 1707 1 10 100 1 10 100 number of cycles at 60 hz 8.3ms single half sine wave characteristics curves (t a = 25c unless otherwise noted) fig.5 m aximum n on - repetitive f orward s urge c urrent peak forward surge current (a)
s1 d ls - S1MLS tai wan semiconductor 5 version:f 1707 package outline dimensions sod - 123 he suggested pad layout marking diagram dim. unit (mm) unit (inch) min max min max a 1.65 1.95 0.065 0.077 b 2.60 3.00 0.102 0.118 c 0.85 1.15 0.033 0.045 d 0.75 0.85 0.030 0.033 e 0.10 0.20 0.004 0.008 f 0.55 0.75 0.022 0.030 g 0.35 0.55 0.014 0.022 h 1.90 2.30 0.075 0.091 i 1.35 1.55 0.053 0.061 j 0.95 1.25 0.037 0.049 k 3.50 3.90 0.138 0.154 l 0.35 0.55 0.014 0.022 symbol unit (mm) unit (inch) a 1.40 0.055 b 2.40 0.094 c 0.70 0.028 d 0.90 0.035 e 1.40 0.055 p/n = marking code yw = date code f = factory code
s1 d ls - S1MLS tai wan semiconductor 6 version:f 1707 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown her ein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such impro per use or sale.
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