t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 1 of 8 2n6788u and 2N6790U compliant n- channel mosfet qualified per mil - prf - 19500/555 qualified levels : jan, jantx, and jantxv description th ese 2n6788 u and 2n6790 u device s are military qualified up to a jantxv l evel for high - reliability applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. u- 18 lcc package also available in : to - 205af package ( leaded ) 2n6788 & 2n6790 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 2n6788 a nd 2n6790 number s. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/555. ? r ohs compliant by design . applications / benefits ? high f requency o peration. ? lightweight , low - profile package . ? esd rated to class 1a. maximum ratings @ t c = +25 c unless otherwise noted parameters / test conditions symbol value unit junction & storage temperature t j , t stg - 55 to +150 c thermal resistance junction - to - case (see figure 1 ) r ? jc 8.93 oc /w total power dissipation (1) p t 0.8 w drain to g ate v oltage 2n6788 u 2n6790 u v dg 100 200 v drain C source voltage 2n6788 u 2n6790 u v ds 100 200 v gate C source voltage v gs 20 v drain current , dc @ t c = +25 c (2) (see figure ?) 2n6788 u 2n6790 u i d1 4.5 2.8 a drain current , dc @ t c = +100 c 2n6788 u 2n6790 u i d2 2.8 1.8 a off -s tate current (3) 2n6788 u 2n6790 u i dm 18 11 a (pk) source c urrent 2n6788 u 2n6790 u i s 4.5 2.8 a notes : 1. derated l inearly by 0.1 1 w/c for t c > +25 c. 2. the following formula derives the maximum theoretical i d limit. i d is also limited by package and internal wires and may be limited due to pin diameter. 3 . i dm = 4 x i d1 ; i d1 as calculated in note 2. msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6 822298 website: www.microsemi.com downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 2 of 8 2n6788u and 2N6790U mechanical and packaging ? case: ceramic lcc - 18 with k ovar gold plated lid. ? terminals: gold plating over nickel. ? marki ng: manufacturer's id, part n umber, d ate c ode, esd s ymbol at p in 1 location. ? tape & reel option: standard per eia - 481 - d. consult f actory for q uantities. ? see p ackage d imensions on last page. part nomenclature j an 2n6790 u reliability level jan=jan level jantx=jantx level jantxv=jantxv level blank = commercial jedec type number surface mount package symbols & definitions symbol definition i d drain current . i f forward current . t c case temperat ure . v dd drain supply voltage . v ds drain to source voltage . v gs gate to source voltage . downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 3 of 8 2n6788u and 2N6790U electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics drain - source breakdown voltage v gs = 0 v, i d = 1 ma 2n6788 u 2n6790 u v (br)dss 100 200 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na parameters / test conditions symbol min. max. unit on character is tics drain current v gs = 0v, v ds = 8 0 v v gs = 0v, v ds = 160 v 2n6788 u 2n6790 u i dss1 25 a drain current v gs = 0v, v ds = 8 0 v , t j = +125 c v gs = 0v, v ds = 160 v, t j = +125 c 2n6788 u 2n6790 u i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 3. 5 a pulsed v gs = 10 v, i d = 2.25 a pulsed 2n6788 u 2n6 790 u r ds(on)1 0.30 0.80 ? static drain - source on - state resistance v gs = 10 v, i d = 6.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed 2n6788 u 2n6790 u r ds(on)2 0.35 0.85 ? static drain - source on - state resistance t j = +125 c: v gs = 10 v, i d = 3. 5 a pu lsed v gs = 10 v, i d = 2.25 a pulsed 2n6788 u 2n6790 u r ds(on)3 0.54 1.50 ? diode forward voltage v gs = 0 v, i d = 6.0 a pulsed v gs = 0 v, i d = 3.5 a pulsed 2n6788 u 2n6790 u v sd 1.8 1.5 v downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 4 of 8 2n6788u and 2N6790U electrical characteristics @ t a = +25 c, unless ot herwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 6.0 a, v ds = 50 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 u 2n6790 u q g(on) 18.0 14.3 nc gate to source charge v gs = 10 v, i d = 6.0 a, v ds = 50 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 u 2n6790 u q gs 4.0 3.0 nc gate to drain charge v gs = 10 v, i d = 6.0 a, v ds = 50 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 u 2n6790 u q gd 9. 0 9.0 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 u 2n6790 u t d(on) 40 ns rinse time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 u 2n6790 u t r 70 50 ns turn - off delay time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 u 2n6790 u t d(off) 40 50 ns fall time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 u 2n6790 u t f 70 50 ns diode reverse recovery time di/dt = 100 a/s, v dd 50 v, i f = 6 .0 a di/dt = 100 a/s, v dd 50 v, i f = 3 .5 a 2n6788 u 2n6790 u t rr 240 400 ns downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 5 of 8 2n6788u and 2N6790U graphs t 1 , rectangular pulse duration (seconds) figure 1 thermal impedance curves t c case temperature (c) t c case temperature (c) (2n6788 u) (2n6790 u) figure 2 maximum drain current vs. case temperature graph i d drain current (amperes) thermal response (z ? jc ) i d drain current (amperes) downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 6 of 8 2n6788u and 2N6790U graphs (continued) v ds , drain - to - source voltage (volts) maximum safe operating area (2n6788u) v ds , drain - to - source voltage (volts) maximum safe operating area (2N6790U) i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 7 of 8 2n6788u and 2N6790U package dimensions dimensions ltr inches millimeters min max min max bl .345 .360 8.77 9.14 bw .280 .295 7.1 2 7.49 ch .095 .115 2.42 2.92 ll1 .040 .055 1.02 1.39 ll2 .055 .065 1.40 1.65 ls .050 bsc 1.27 bsc ls1 .025 bsc 0.635 bsc ls2 .008 bsc 0.203 bsc lw .020 .030 0.51 0.76 q1 .105 ref 2.67 ref q2 .120 ref 3.05 ref q3 .045 .055 1.14 1.40 tl .070 .080 1.78 2.03 tw .120 .130 3.05 3.30 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. downloaded from: http:///
t4 - lds -0 164 -1, rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 8 of 8 2n6788u and 2N6790U pad layout pad assignments downloaded from: http:///
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