jzis.eu ^smi-l-onauctoi ij-* 10 ducts., una. c / u 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa121 4 descriptio n ? collector-emitte r breakdow n voltage - v (b r)ceo = -50 v (min ) ? goo d linearit y o f h f e ? wid e are a o f saf e operatio n application s ? desinge d fo r lo w frequenc y powe r amplifie r applications . absolut e maximu m ratings(ta=25'c ) pi n 1 . emitte r 2.collecto r 3 . bas e to-12 6 packag e symbo l vcb o vce o vge o i c p c t j t st g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @ t a =25 c tota l powe r dissipatio n @ t c =25 c junctio n temperatur e storag e temperatur e rang e valu e -6 0 -5 0 - 5 - 2 1. 5 2 5 15 0 -55-15 0 uni t vv v a w ? c ? c e - r \ h - t " d- ? ?-^ t j -b~ - i r f 1 g * ? i * * ^?^mm h 2 3 di m a b c d f g h j k 0 r v l r q t v q d m mi n 10.7 0 7.7 0 2.6 0 0.6 6 3.1 0 4,4 8 2.0 0 1.3 5 15.3 0 3.7 0 0.4 0 1.1 7 _? j t ? a k ~~ * f i n ma x 10.9 5 7.9 0 2.3 0 0.8 6 3.3 0 4.5 8 2.2 0 1.5 5 16.3 0 3.? 0 0.6 0 1.3 7 = (* - i r*- j *- r n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e of"goin g t o press . however . n j semi-conductor s assume s n o responsibilit y lo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa121 4 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l v(br)ce o v(br)eb o vce(sat ) vse(sat ) icb o ieb o hf e f l co e paramete r collector-emitte r breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r saturation voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n current-gainbandwidt h produc t outpu t capacitanc e condition s l c =-1ma ; i b = 0 l e =-0.1ma;l c = 0 | c =-1a ; i b =-0.1 a | c =-1a;i b =-0.1 a v cb = -60v ; i e = 0 v eb = -5v ; l c = 0 lc=-150ma;v c e=-2 v lc=- 1 00ma ; v ce = -10 v i e =0 ; v c b=-10v;f = 1.0mh z mi n -5 0 - 5 6 0 typ . 3 5 4 5 ma x -1. 0 -1. 5 -1. 0 -1. 0 32 0 uni t vv v v m a u a mh z p f downloaded from: http:///
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