i c x ij 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 bdy8 3 descriptio n ? uommuou s ^onecio r uurrem-i c tr t ? collecto r powe r dissipation - : p c = 36 w @t c = 25 c ? complemen t t o typ e bdy8 1 application s ? designe d fo r genera l purpos e switchin g an d amplifie r applications . absolut e maximu m ratings(t a =25c ) symbo l vcb o vce x vce o veb o i c i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e v be = + 1 .5 v collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s bas e current-continuou s collecto r powe r dissipation@tc=25 c junctio n temperatur e storag e temperatur e valu e -5 0 -5 0 -5 0 -1 0 - 4 - 2 3 6 15 0 -55-17 5 uni t vv v v a a w ? c ? c therma l characteristic s symbo l rthj- c paramete r ma x therma l resistance.junctio n t o cas e 3. 5 uni t "cm / i <- > - f 1 2 3 3 pin 1 base 1 . collecto r 3 . emitte r to-220 c packag e i uf j a ?-~b- " ?> ihjf t v>oe v k 1 * _ , h c i - ? - ? ? ii * g [* - dii v a b r d f g h j k l a r s u v /- - l 0 -* ? r v m m wi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10.1 0 4.4 0 0.9 0 3.6 0 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 ?*- s _ v f i i v * ?i*- j n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r bdy8 3 electrica l characteristic s tc=25' c unles s otherwis e specifie d symbo l vceo(sus ) v(br)cb o v(br)eb o vce(sat ) vbe(op ) ice o icb o ieb o hfe- i hfe- 2 f r paramete r collector-emitte r sustainin g voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n curren t gain-bandwidt h produc t condition s lc=-100ma;l b = 0 lc=~10ma ; !e = 0 l e =-10ma;l c = 0 l c = -3a ; i b = -0.3 a l c = -0.5a ; v ce = -5 v v ce = -20v ; i b = 0 v cb = -20v ; i e = 0 v eb = -5v ; l c = 0 l c = -0.5a ; vce = -5 v lc = -2.5a ; vce = -5 v lc=-0.5a;v c e=-10 v mi n -5 0 -5 0 -1 0 4 0 1 0 typ . 3 ma x -1. 5 -0. 9 -1 0 -0. 2 -0. 1 24 0 uni t v v v v v m a m a m a mh z hpe- 1 classification s a 40-8 0 b 70-14 0 c 120-24 0 downloaded from: http:///
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