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top view 8 12 3 4 5 6 7 d d d d g s a s s a description advanced process technology ultra low on-resistance n channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in so-8 package utilize the lastest processing techniques to achieveextremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. this surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 www.irf.com 1 symbol parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation w linear derating factor mw/c e as single pulse avalanche energency mj dv/dt peak diode recovery dv/dt v/ns t j, t stg junction and storage temperature range c symbol parameter typ max units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 v thermal resistance ratings absolute maximum ratings max 30 20 13 c/w 9.2 5.0 0.02 260 -55 to +150 58 2.5 a form quantity irf7413qtrpbf so-8 tape and reel 4000 eol 529 IRF7413QPBF so-8 tube 95 eol 529 IRF7413QPBF please search the eol part number on irs website for guidance ba se pa rt num be r package type standard pack eol noti ce orderable part number replacement part number downloaded from: http:///

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3./ symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.034 CCC v/c CCC CCC 0.011 CCC CCC 0.018 v gs(th) gate threshold voltage 1.0 CCC 3.0 v g fs forward transconductance 10 CCC CCC s CCC CCC 12 CCC CCC 25 gate-to-source forward leakage CCC CCC -100 gate-to-source reverse leakage CCC CCC 100 q g total gate charge CCC 52 79 q gs gate-to-source charge CCC 6.1 9.2 q gd gate-to-drain ("miller") charge CCC 16 23 r g gate resistance 1.2 CCC 3.7 t d(on) turn-on delay time CCC 8.6 CCC t r rise time CCC 50 CCC t d(off) turn-off delay time CCC 52 CCC t f fall time CCC 46 CCC c iss input capacitance CCC 1800 CCC c oss output capacitance CCC 680 CCC c rss reverse transfer capacitance CCC 240 CCC symbol parameter min. typ. max. units continuous source current (body diode) pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 74 110 ns q rr reverse recovery charge CCC 200 300 nc nc i sm CCC CCC 58 i s i dss drain-to-source leakage current a i gss pf 3.1 CCC CCC a ? = 1.0mhz, see fig. 5 r ds(on) v ds = v gs , i d = 250 a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c na v gs = 4.5v, i d = 3.7a static drain-to-source on-resistance ns v gs = 10v, i d = 7.3a mosfet symbol v ds = 10v, i d = 3.7a i d = 7.3a v ds = 24v conditions r g = 2.0 , see fig. 10 v gs = 0v r g = 6.2 v ds = 25v t j = 25c, i s = 7.3a, v gs = 0v t j = 25c, i f = 7.3a di/dt = 100a/ s showing the integral reverse p-n junction diode. electrical characteristics @ tj = 25c (unless otherwise specified) source-drain ratings and characteristics v gs = 10v, see fig. 6 and 9 v dd = 15v i d = 7.3a v gs = -20v v gs = 20v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma downloaded from: http:///

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1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 7.3a d downloaded from: http:///

www.irf.com 4 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms ! ! "# !$ %! %! 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 1 02 03 04 05 06 0 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 7.3a v = 24v v = 15v d dsds 1 10 100 0.4 1.2 2.0 2.8 3.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///

www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) "# & ' ()* $+ v ds 90%10% v gs t d(on) t r t d(off) t f ! ! ,' + + 1 0.1 % +
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www.irf.com 6 "# $'&! 0( ',' 0( ' t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 3.3a 6.0a 7.3a downloaded from: http:///

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1&2& p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 3 +
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www.irf.com 8 so-8 package details so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont rol ling dime ns ion: mill ime t e r 3. dime ns ions are s hown in mill ime t e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold prot rus ions not t o exce ed 0.25 [.010]. 7 dime ns ion is t he l e ngt h of l e ad f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o exce ed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = las t digit of t he ye ar part number lot code ww = we e k example: this is an irf7101 (mosfet ) p = designates lead-free product (opt ional) a = as s e mb l y s i t e code dimensions are shown in milimeters (inches)

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www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) ! downloaded from: http:///

www.irf.com 10 qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments 6/17/2014 ? added ordering information to reflect the end-of-life revision history downloaded from: http:///

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