15a 100v n-channelmosfet kia semiconductors 6410A kia semiconductors kia semiconductors 1 . description thesen-channelenhancementmodepowerfieldeffecttransistorsareusingtrenchdmos technology.thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance, providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheand commutationmode.thesedevicesarewellsuitedforhighefficiencyfastswitchingapplications. 2 . features n r ds(on) =72m @v gs =10v n improveddv/dtcapability n fastswitching n 100%easguaranteed n greendeviceavailable 3. applications n networking n loadswitch n ledapplications 4.symbol 1of5 rev1.0jan2015 pin function 1 gate 2 drain 3 source 4 drain
15a 100v n-channelmosfet kia semiconductors 6410A kia semiconductors kia semiconductors 5. absolutemaximumratings (t a =25 c,unlessotherwisenoted) parameter symbol rating units drain-sourcevoltage v dss 100 v gate-sourcevoltage v gss 20 v operatingjunctiontemperaturerange t j -50to150 o c storagetemperaturerange t stg -50to150 o c continuousdraincurrent t c =25 o c i d 15 a t c =100 o c 9.5 a pulseddraincurrent 1 i dm 60 a maximumpowerdissipation t c =25 o c p d 50 w derateabove25 o c 0.4 w/ o c 6. thermalcharacteristics parameter symbol rating unit thermalresistance,junction-ambient r ja 62 o c/w thermalresistance,junction-case r jc 2.5 o c/w 2of5 rev1.0jan2015
15a 100v n-channelmosfet kia semiconductors 6410A kia semiconductors kia semiconductors 7 . electricalcharacteristics (t a =25 c,unlessotherwisenoted) parameter symbol testconditions min typ max units drain-sourcebreakdownvoltage bv dss v gs =0v,i d =250ua 100 - - v bv dss temperaturecoefficient bv dss / t j referenceto25 c, i d =1ma - 0.05 - v/ c zerogatevoltagedraincurrent i dss v ds =100v,v gs =0v t j =25 c - - 1 a v ds =80v,v gs =0v t j =125 c - - 10 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250 a 1.2 1.6 2.5 v v gs(th) temperaturecoefficient v gs(th) - -5 - mv/ c forwardtransconductance gfs v ds =10v,i d =3a - 8.7 - s gateleakagecurrent i gss v gs =+ 20v,v ds =0v - - + 100 na drain-sourceon-stateresistance r ds(on) v gs =10v,i ds =5a - 72 90 m gateresistance r g v ds =0v,v gs =0v,f=1mhz - 1.3 2.6 diodeforwardvoltage v sd i sd =1a,v gs =0v,t j =25 c - - 1 v reverserecoverytime 2 t rr i s =1a,v gs =30v dl sd /dt=100a/ s,t j =25 c - - - ns reverserecoverycharge 2 q rr - - - nc inputcapacitance c iss v ds =50v,v gs =0v, f=1mhz - 1480 2150 pf outputcapacitance c oss - 480 700 reversetransfercapacitance c rss - 35 55 turn-ondelaytime 2.3 t d(on) v dd =30v,i d =1a, r g =3.3 ,v gs =10v - 2.9 6 ns risetime 2.3 t r - 9.5 18 turn-offdelaytime 2.3 t d(off) - 18.4 35 falltime 2.3 t f - 5.3 10 totalgatecharge 2.3 q g v ds =48v,v gs =10v i d =5a - 9.3 13 nc gate-sourcecharge 2.3 q gs - 2.1 4.2 gate-draincharge 2.3 q gd - 1.8 4 continuoussourcecurrent i s v g =v d =0v,forcecurrent - - 15 a pulsedsourcecurrent i sm - - 60 a note:1.repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature 2.thedatatestedbypulse,pulsewidth< 300usdutycycle< 2%. 3.essentiallyindependentofoperatingtemperature. 3of5 rev1.0jan2015
15a 100v n-channelmosfet kia semiconductors 6410A kia semiconductors kia semiconductors 8 . testcircuitsandwaveforms 4of5 rev1.0jan2015
15a 100v n-channelmosfet kia semiconductors 6410A kia semiconductors kia semiconductors 5of5 rev1.0jan2015
|
