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this is information on a product in full production. december 2013 docid023350 rev 2 1/20 STB7ANM60N, std7anm60n automotive-grade n-channel 600 v, 5 a, 0.84 typ., mdmesh? ii power mosfets in d 2 pak and dpak packages datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. dpak 1 3 tab 1 3 2 tab d pak 2 $0y '7$% * 6 order codes v ds @ t jmax r ds(on) max. i d STB7ANM60N 650 v 0.9 5 a std7anm60n table 1. device summary order codes marking packages packaging STB7ANM60N 7anm60n d 2 pak tape and reel std7anm60n dpak www.st.com
contents STB7ANM60N, std7anm60n 2/20 docid023350 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid023350 rev 2 3/20 STB7ANM60N, std7anm60n electrical ratings 20 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 45 w dv/dt (2) 2. i sd 5 a, di/dt 400 a/ s, v dd = 80% v (br)dss , v ds(peak) < v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pak dpak r thj-case thermal resistance junction-case max 2.78 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2oz cu thermal resistance junction-pcb max 35 50 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 119 mj
electrical characteristics STB7ANM60N, std7anm60n 4/20 docid023350 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.5 a 0.84 0.9 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 363 - pf c oss output capacitance - 24.6 - pf c rss reverse transfer capacitance -1.1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 130 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.4 - q g total gate charge v dd = 480 v, i d = 5 a, v gs = 10 v (see figure 16 ) -14-nc q gs gate-source charge 2.7 - nc q gd gate-drain charge 7.7 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 2.5 a, r g = 4.7 , v gs = 10 v (see figure 17 ) -7-ns t r rise time - 10 - ns t d(off) turn-off-delay time - 26 - ns t f fall time - 12 - ns
docid023350 rev 2 5/20 STB7ANM60N, std7anm60n electrical characteristics 20 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/ s v dd = 60 v (see figure 20 ) - 213 ns q rr reverse recovery charge - 1.5 c i rrm reverse recovery current - 14 a t rr reverse recovery time i sd = 5 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 20 ) - 265 ns q rr reverse recovery charge - 1.8 c i rrm reverse recovery current - 14 a
electrical characteristics STB7ANM60N, std7anm60n 6/20 docid023350 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 100 am06476v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 100 am06474v1 i d 5 3 1 0 0 10 v ds (v) 20 (a) 40 7 8 5v 6v v gs =10v 2 4 6 9 am06477v1 i d 6 4 2 0 0 4 v gs (v) 8 (a) 2 6 10 8 1 3 5 7 9 10 v ds =20v am06478v1
docid023350 rev 2 7/20 STB7ANM60N, std7anm60n electrical characteristics 20 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 4 q g (nc) (v) 12 8 6 8 10 v dd =480v i d =5a 14 12 300 200 100 0 400 500 v ds 2 10 16 v ds (v) am06479v1 r ds(on) 0.78 0.76 0.74 0 2 i d (a) ( ohm ) 1 3 0.80 0.82 v gs =10v 4 5 0.84 0.86 0.88 am06480v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am06481v1 e oss 1.0 0.5 0 0 100 v ds (v) (j) 400 200 300 1.5 500 600 2.0 2.5 am06482v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am06483v1 r ds(on) 1.9 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 am06484v1 i d =2.5a
electrical characteristics STB7ANM60N, std7anm60n 8/20 docid023350 rev 2 figure 14. normalized v ds vs temperature v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
docid023350 rev 2 9/20 STB7ANM60N, std7anm60n test circuits 20 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB7ANM60N, std7anm60n 10/20 docid023350 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023350 rev 2 11/20 STB7ANM60N, std7anm60n package mechanical data 20 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB7ANM60N, std7anm60n 12/20 docid023350 rev 2 figure 21. d2pak (to-263) drawing figure 22. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid023350 rev 2 13/20 STB7ANM60N, std7anm60n package mechanical data 20 table 10. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STB7ANM60N, std7anm60n 14/20 docid023350 rev 2 figure 23. dpak (to-252) type a drawing 0068772_m_type_a
docid023350 rev 2 15/20 STB7ANM60N, std7anm60n package mechanical data 20 figure 24. dpak (to-252) type a footprint (b) b. all dimensions are in millimeters footprint_rev_m_type_a
packaging mechanical data STB7ANM60N, std7anm60n 16/20 docid023350 rev 2 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500
docid023350 rev 2 17/20 STB7ANM60N, std7anm60n packaging mechanical data 20 figure 25. tape p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 table 12. dpak (to-252) tape and reel mechanical data (continued) tape reel dim. mm dim. mm min. max. min. max. p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data STB7ANM60N, std7anm60n 18/20 docid023350 rev 2 figure 26. reel a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid023350 rev 2 19/20 STB7ANM60N, std7anm60n revision history 20 6 revision history table 13. document revision history date revision changes 21-jun-2012 1 first issue. 12-dec-2013 2 ? modified: title, features and table 1 in cover page ? modified: figure 15 , 16 , 17 and 18 ? updated: table 10 and figure 23 , 24 ? minor text changes
STB7ANM60N, std7anm60n 20/20 docid023350 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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