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product standards mos fet MTM761110LBF 1. drain 4. source 2. drain 5. drain 3. gate 6. drain ? absolute maximum ratings ta = 25 c operating ambient temperature *1 measuring on ceramic board at 40 mm 38 mm 0.2 mm. absolute maximum rating pd non-heat sink shall be made 150 mw. 1. drain 4. source 2. drain 5. drain 3. gate 6. drain page MTM761110LBF silicon p-channel mosfet ? features y for switching low drain-source on-state resistance : rds(on) typ. = 26 m ? (vgs = -4.5 v) of 6 unit : mm wsmini6-f1-b sc-113da code jeita pin name D panasonic embossed type (thermo-compression sealing) : 3 000 1 vds -12 gate to source voltage vgs 8 drain to source voltage halogen-free / rohs compliant ? marking symbol : gs ? packaging internal connection a vv id idp a tch 150 -4.0 -20 700 mw c drain current (pulsed) tstg total power dissipation *1 pd storage temperature range channel temperature topr drain current y low drive voltage : 1.8 v drive symbol rating unit (eu rohs / ul-94 v-0 / msl : level 1 compliant) y pcs / reel (standard) parameter note c c -40 to + 85 -55 to +150

3 (g) (s) 4 1 (d) 2 (d) (d) 6 (d) 5 doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
product standards mos fet MTM761110LBF ? electrical characteristics ta = 25 c 3 c measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. *1 measurement circuit for turn-on delay time / turn-off delay time page aa -1.0 30 54 36 -0.3 10 gate-source cutoff current igss vgs = 8 v, vds = 0 unit drain-source surrender voltage vdss id = -1 ma, vgs = 0 -12 v min typ max -0.1 parameter symbol conditions vds = -10 v, vgs = 0 drain-source cutoff current idss 6 2of nsns |yfs| id = -1.0 a, vgs = -4.5 v id = -1.0 a, vds = -10 v 4.0 id = -0.5 a, vgs = -2.5 v gate threshold voltage vth id = -1.0 ma, vds = -6.0 v 1400 -0.65 rds(on)3 id = -0.5 a, vgs = -1.8 v rds(on)2 rds(on)1 drain-source on resistance crss 150 coss vds = -10 v, vgs = 0, f = 1 mhz ciss s pf v 26 34 m ? 41 135 td(on) 9 vdd = -6 v, vgs = 0 to -4 v tf 160 id = -1.0 a id = -1.0 a vdd = -6 v, vgs = -4 to 0 v tr 11 td(off) 270 rise time *1 turn-off delay time *1 note reverse transfer capacitance (common source) fall time *1 forward transfer admittance short-circuit output capacitance (common source) short-circuit input capacitance (common source) turn-on delay time *1 doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
product standards mos fet MTM761110LBF *1 measurement circuit for turn-on delay time / turn-off delay time page of 6 c c c 3 vdd= -6 v vout vin id= -1 a rl= 10 ? vin 0v -4v pw = 10sd.c. 1 % ds g 50 ? doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
product standards mos fet MTM761110LBF technical data ( reference ) page dynamic input/output characteristics 4of6 capacitance - vds id - vds id - vgs vds - vgs rds(on) - id -4-3 -2 -1 0 -0.5 -0.4 -0.3 -0.2 -0.1 0 drain-source voltage vds (v) drain current id (a) vgs = -1.0 v -1.5 v -2.0 v -2.5 v -4.5 v -0.1 -0.08-0.06 -0.04 -0.02 0 -1.5 -1.2 -0.9 -0.6 -0.3 0 gate-source voltage vgs (v) drain current id (a) 25 ? ta = 85 ? -40 ? -0.2-0.1 0 -5 -4 -3 -2 -1 0 gate-source voltage vgs (v) drain-source voltage vds (v) id = -2.0 a -1.0 a -0.5 a 10 100 1000 10000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss -6-5 -4 -3 -2 -1 0 0 5 10 15 20 total gate charge qg (nc) gate-source voltage vgs (v) vdd = -6 v 10 100 -0.1 -1 drain current id (a) drain source on-state resistance rds (on) (m ? ) vgs = -4.5 v -1.8 v -2.5 v doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
product standards mos fet MTM761110LBF technical data ( reference ) page 5 of rth - tsw 6 vth - ta rds(on) - ta pd - ta safe operating area 0 -0.2 -0.4 -0.6 -0.8 -50 0 50 100 150 temperature ( ? ) gate-source threshold voltage vth (v) -50 0 50 100 150 temperature ( ? ) drain-source on-resistance rds(on) (m ? ) vgs = -1.8 v -2.5 v -4.5 v 0 0.2 0.4 0.6 0.8 1 0 50 100 150 temperature ta ( ? ) total power dissipation pd (w) non-heat sink mounted on ceramic board (40 x 38 x 0.2 mm) 10 100 1000 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? /w) -0.01 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 drain-source voltage vds (v) drain current id (a) idp = -20 a operation in this areais limited by rds(on) 100 ms 1 s dc 1 ms 10 ms ta = 25 ? , glass epoxy board (25.4 25.4 t0.8 mm) coated with copper foil,which has more than 300 mm 2 . doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
product standards mos fet MTM761110LBF unit : mm page 6 wsmini6-f1-b ? 6of land pattern (reference) (unit : mm) c c c ? ?

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doc no. tt4-ea-10433 revision. 2 established : 2008-02-01 revised : 2013-10-18 downloaded from: http:///
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