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International Business Machines, Corp.
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Part No. |
POWERPC603E POWERPCEM603E
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OCR Text |
...ology technology 100 mhz 0.5m/0.46m l eff , cmos, 4 levels metal 166 mhz 0.35m/0.25m l eff , cmos, 5 levels metal 200 mhz 0.35m/0.18m l eff , cmos, 5 levels metal die size die size die size die size die size 100 mhz 8.4 mm x 11.67 mm (98 m... |
Description |
32-Bit PowerPC Reduced Instruction Set Computer (RISC) Microprocessor(32-PowerPC 精简指令集微处理 32位PowerPC精简指令集计算机(RISC)微处理器(32 -位PowerPC的精简指令集微处理器)
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File Size |
64.25K /
2 Page |
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Shenzhen Jin Yu Semiconductor Co., Ltd.
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Part No. |
PT8205
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OCR Text |
... 5 sec. 1) 2) ? 30m ? 46m m illi m e t er m illi m e t er r e f . m in . m a x. r e f. m in. m a x . a 1 . 10 m a x . l 0 . 45 r e f. a 1 0 0 . 10 l1 0 . 60 r e f . a 2 0 . ... |
Description |
20 V Dual N-Channel Enhancement Mode MOSFET
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File Size |
2,425.55K /
3 Page |
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Sumida, Corp. SUMIDA CORP
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Part No. |
CDR6D28MN-470NC CDR6D28MN-470NB CDR10D48MN-100NB CDR10D48MN-560NC CDR10D48MN-470NC SUMIDACORP-CDR10D48MN-101NC CDR10D48MN-8R5NC
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OCR Text |
...) 43.8m(35m ) 50.0m(40m ) 57.5m(46m ) 63.8m(51m ) 70.0m(56m ) 76.3m(61m ) 82.5m(66m ) 88.8m(71m ) 120m(96m ) 135m(108m ) 150m(121m ) 199m(159m ) 231m(185m ) 309m(247m ) 335m(268m ) 459m(367m ) 501m(401m ) 561m(449m ) 838m(670m ) 936m(749m )... |
Description |
1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 8.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
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File Size |
449.49K /
4 Page |
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Fairchild Semiconductor, Corp.
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Part No. |
FDA8440
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OCR Text |
..., 2.1m features ?r ds(on) = 1.46m ( typ.)@ v gs = 10v, i d = 80a ?q g(tot) = 345nc (typ.)@ v gs = 10v ? low miller charge ? low qrr body diode ? uis capability (single pulse and repetitive pulse) ? 160a guarantee for 2 sec ?rohs com... |
Description |
N-Channel PowerTrenchMOSFET 30 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
298.24K /
8 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AON4413
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OCR Text |
... (v gs = -10v) r ds(on) < 46m ? (v gs = -10v) r ds(on) < 60m ? (v gs = -6v) the aon4413 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in... |
Description |
P-Channel Enhancement Mode Field Effect Transistor
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File Size |
423.22K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AON2407
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OCR Text |
... r ds(on) (at v gs =-4.5v) < 46m w r ds(on) (at v gs =-2.5v) < 70m w symbol v ds the aon2407 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load ... |
Description |
30V P-Channel MOSFET
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File Size |
289.61K /
5 Page |
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