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Quanzhou Jinmei Electronic ... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD00HVS1 RD00HVS1-15
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OCR Text |
...m eled wire 4Turns,D:0.43m m ,2.46m m O .D L2:LQ G 11A68N(68nH,m urata) L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D L4: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D C 1,C2:1000pF,0.022uF in parallel 4m m
RD 00HV S1 5m m
L4 4m m... |
Description |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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File Size |
141.85K /
6 Page |
View
it Online |
Download Datasheet
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Quanzhou Jinmei Electro... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD02MUS1 RD02MUS1-15
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OCR Text |
...m eled wire 5Turns,D:0.43m m ,2.46m m O .D L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate Micro strip line wi... |
Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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File Size |
237.02K /
9 Page |
View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD02MUS2
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OCR Text |
...m eled wire 5Turns,D:0.43m m ,2.46m m O .D L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate Micro strip line wi... |
Description |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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File Size |
239.62K /
9 Page |
View
it Online |
Download Datasheet
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Mitsubishi Electric Semiconductor
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Part No. |
RD02MUS1B
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OCR Text |
...m eled wire 5T urns,D:0.43m m,2.46m m O .D L2: Enam eled wire 3T urns,D:0.43m m ,2.46m m O .D L3: Enameled wire 9Turns,D :0.43m m ,2.46mm O .D C1,C2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate Micro s trip line widt... |
Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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File Size |
182.83K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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