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rg-59 Datasheet PDF File

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				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5028BVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC ...59 (.102) 050-5615 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 20A 0.280 Ohm
File Size	61.82K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC ...59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) 3.78 (.149) Dia. 3.53 (.139) 20.32 (...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5040CNR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.80 MIN TYP APT5040CNR MAX UNIT 15 1430 330 130 71 8.7 37 14 21 44 15 22 1800 pF 465 200...59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) 3.78 (.149) Dia. 3.53 (.139) 20.32 (.80...
Description	POWER MOS IV 500V 13.0A 0.400 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	52.43K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50GF120B2R APT50GF120LR
OCR Text	...= 15V I C = I C2 VCC = 0.80VCES RG = 10 I C = I C2 MIN TYP MAX UNIT 3450 330 230 330 30 205 55 245 155 275 45 100 540 40 7.0 7.0 14.0 ...59 (.102) 5.45 (.215) BSC 2-Plcs. 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) ...
Description	The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代 Fast IGBT 1200V 80A
File Size	37.28K / 3 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	...lamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temp...59 (.102) 5.45 (.215) BSC 2-Plcs. APT Reserves the right to change, without notice, the specif...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2FLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG =0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 89 356 1.3 15 300 600 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.74K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2LL
OCR Text	... DV NF A I 110 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 87 348 1.3 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	50.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VFR
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 77 308 1.3 5 300 600 ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.66K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VR
OCR Text	...A FO AD IN 210 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT Amps Volts ns C ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description	POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	33.79K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 67 268 1.3 5 270 540 ...59 (.102) 3.00 (.118) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.95K / 2 Page	View it Online	Download Datasheet

For rg-59 Found Datasheets File :: 4053 Search Time::2.61ms
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